Excess avalanche noise in In0.52Al0.48As

被引：80

作者：

Goh, Y. L. ^{[1
]}

Marshall, A. R. J.

Massey, D. J.

Ng, J. S.

Tan, C. H.

Hopkinson, M.

David, J. P. R.

Jones, S. K.

Button, C. C.

Pinches, S. M.

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

[2] Bookham Technol PLC, Caswell Towcester NN12 8EQ, Northants, England

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2007年 / 43卷 / 5-6期

基金：

英国工程与自然科学研究理事会;

关键词：

avalanche photodetectors; excess noise; impact ionization; InAlAs;

D O I：

10.1109/JQE.2007.897900

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Avalanche multiplication and excess noise arising from both electron and hole injection have been measured on a series of In0.52Al0.48As p(+)-i-n(+) and n(+)-i-p(+) diodes with nominal avalanche region widths between 0.1 and 2.5 mu m. With pure electron injection, low excess noise was measured at values corresponding to effective kappa = ss/alpha between 0.15 and 0.25 for all widths. Enabled ionization coefficients were deduced using a non-local ionization model utilizing recurrence equation techniques covering an electric field range from approximately 200 kV/cm to 1 MV/cm.

引用

页码：503 / 507

页数：5

共 50 条

[21] Excess noise in silicon avalanche photodiodes [J].

Kocak, F. ;

Tapan, I. .

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2007, 9 (04) :810-813

[22] Super-flat interfaces in In0.53Ga0.47As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy [J].

Kitada, T ;

Saeki, T ;

Ohashi, M ;

Shimomura, S ;

Adachi, A ;

Okamoto, Y ;

Sano, N ;

Hiyamizu, S .

JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (09) :1043-1046

[23] Super-flat interfaces in In0.53Ga0.47As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy [J].

Takahiro Kitada ;

Tatsuya Saeki ;

Masanobu Ohashi ;

Satoshi Shimomura ;

Akira Adachi ;

Yasunori Okamoto ;

Naokatsu Sano ;

Satoshi Hiyamizu .

Journal of Electronic Materials, 1998, 27 :1043-1046

[24] Avalanche Multiplication and Excess Noise in InAs Electron Avalanche Photodiodes at 77 K [J].

Marshall, Andrew Robert Julian ;

Vines, Peter ;

Ker, Pin Jern ;

David, John P. R. ;

Tan, Chee Hing .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2011, 47 (06) :858-864

[25] The Determination of Unity Gain for InGaAs/InP Avalanche Photodiodes With Excess Noise Measurements [J].

Tu, Junjie ;

Zhao, Yanli ;

Wen, Ke ;

Li, Qian ;

Li, Yuan .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2017, 29 (08) :671-674

[26] New Submicron Low Gate Leakage In0.52Al0.48As-In0.7Ga0.3As pHEMT for Low-Noise Applications [J].

Mohamed, Mohamed Fauzi Packeer ;

Omar, Mohamad Faiz Mohamed ;

Khan, Muhammad Firdaus Akbar Jalaludin ;

Ghazali, Nor Azlin ;

Hairi, Mohd Hendra ;

Falina, Shaili ;

Baharin, Mohd Syamsul Nasyriq Samsol .

MICROMACHINES, 2021, 12 (12)

[27] Excess noise measurements in Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes [J].

Jin, Xiao ;

Guo, Bingtian ;

Lewis, Harry ;

Lee, SeungHyun ;

Liang, Baolai ;

Krishna, Sanjay ;

Campbell, Joe C. ;

David, John P. R. .

OPTICAL SENSING AND DETECTION VII, 2022, 12139

[28] Top-Illuminated In0.52Al0.48As-Based Avalanche Photodiode With Dual Charge Layers for High-Speed and Low Dark Current Performances [J].

Chen, Yi-Han ;

Wun, Jhih-Min ;

Wu, Song-Lin ;

Chao, Rui-Lin ;

Huang, Jack Jia-Sheng ;

Jan, Yu-Heng ;

Chen, H. -S. ;

Ni, C. -J. ;

Chang, Hsiang-Szu ;

Chou, Emin ;

Shi, Jin-Wei .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2018, 24 (02)

[29] Low Excess Noise of Al0.85Ga0.15As0.56Sb0.44 Avalanche Photodiode From Pure Electron Injection [J].

Taylor-Mew, Jonathan ;

Shulyak, Vladimir ;

White, Benjamin ;

Tan, Chee Hing ;

Ng, Jo Shien .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2021, 33 (20) :1155-1158

[30] Extremely Low Excess Noise in InAs Electron Avalanche Photodiodes [J].

Marshall, Andrew R. J. ;

Tan, Chee Hing ;

Steer, Mathew J. ;

David, John P. R. .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2009, 21 (13) :866-868

← 1 2 3 4 5 →