Microstructure and optical properties of Eu-doped MgxZn1-xO hexagonal nanocrystals

被引：1

作者：

Li Na ^{[1
]}

Cui HaiTao ^{[1
]}

Liu YuXue ^{[1
]}

Xu ChangShan ^{[1
]}

Liu YiChun ^{[1
]}

机构：

[1] NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China

来源：

SCIENCE CHINA-TECHNOLOGICAL SCIENCES | 2010年 / 53卷 / 03期

基金：

中国国家自然科学基金;

关键词：

MgxZn1-xO hexagonal nanocrystals; europium; SEM; absorption spectra; photoluminescence; X-ray photoelectron energy spectra; IONS;

D O I：

10.1007/s11431-010-0048-x

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Eu-doped MgxZn1-xO hexagonal nanocrystals with wurtzite-type structure were fabricated on quartz substrates by electron beam evaporation using Mg0.15Zn0.85O: Eu-y (0 <= y <= 0.08) target combined thermal annealing followed with rapid cooling. The influence of Eu on the microstructure and optical properties of MgxZn1-xO hexagonal nanocrystals had been investigated using X-ray diffraction spectra, X-ray photoelectron energy spectra, scanning electron microscopy, absorption spectra, and photoluminescence spectra. It was found that Eu-doped MgxZn1-xO hexagonal nanocrystals annealed at 700 degrees C exhibited (002) preferred orientation, whereas undoped MgxZn1-xO hexagonal nanocrystals annealed at 700 degrees C did not exhibit preferential growth. The Mg concentration of Eu-doped and undoped MgxZn1-xO hexagonal nanocrystals annealed at 700 degrees C were both 0.08. However, an evident phase separation of the Eu-doped MgxZn1-xO hexagonal nanocrystals with Mg0.08Zn0.92O/Mg0.03Zn0.97O/air SQW core-shell structures was observed. The binding energy of exciton in Mg0.03Zn0.97O (66 meV) was larger than that in Mg0.08Zn0.92O (50 meV) that was further evidence of Mg0.08Zn0.92O/Mg0.03Zn0.97O/air SQW core-shell structures formed.

引用

页码：761 / 765

页数：5

共 19 条

[1] Rare earth-doped polycrystalline zinc oxide electroluminescent ceramics [J].

Bachir, S ;

Sandouly, C ;

Kossanyi, J ;

RonfardHaret, JC .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1996, 57 (12) :1869-1879

[2] ELECTROLUMINESCENCE OF HO3+ IONS IN A ZNO VARISTOR-TYPE STRUCTURE [J].

BACHIR, S ;

KOSSANYI, J ;

RONFARDHARET, JC .

SOLID STATE COMMUNICATIONS, 1994, 89 (10) :859-863

[3] On the incorporation of trivalent rare earth ions in II-VI semiconductor nanocrystals [J].

Bol, AA ;

van Beek, R ;

Meijerink, A .

CHEMISTRY OF MATERIALS, 2002, 14 (03) :1121-1126

[4] The study of composition non-uniformity in ternary MgxZn1-xO thin films [J].

Chen, J ;

Shen, WZ ;

Chen, NB ;

Qiu, DJ ;

Wu, HZ .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2003, 15 (30) :L475-L482

[5] Full-color emission from In2S3 and ln2S3:Eu3+ nanoparticles [J].

Chen, W ;

Bovin, JO ;

Joly, AG ;

Wang, SP ;

Su, FH ;

Li, GH .

JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (32) :11927-11934

[6] Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films [J].

Choopun, S ;

Vispute, RD ;

Yang, W ;

Sharma, RP ;

Venkatesan, T ;

Shen, H .

APPLIED PHYSICS LETTERS, 2002, 80 (09) :1529-1531

[7] Luminescence and surface properties of MgxZn1-xO thin films grown by pulsed laser deposition [J].

Heitsch, S. ;

Zimmermann, G. ;

Fritsch, D. ;

Sturm, C. ;

Schmidt-Grund, R. ;

Schulz, C. ;

Hochmuth, H. ;

Spemann, D. ;

Benndorf, G. ;

Rheinlaender, B. ;

Nobis, Th. ;

Lorenz, M. ;

Grundmann, M. .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (08)

[8] OPTICAL-PROPERTIES OF AG-RELATED CENTERS IN BULK ZNSE [J].

HOLTZ, PO ;

MONEMAR, B ;

LOZYKOWSKI, HJ .

PHYSICAL REVIEW B, 1985, 32 (02) :986-996

[9] TEMPERATURE-DEPENDENCE OF PHOTOLUMINESCENCE FROM GAAS SINGLE AND MULTIPLE QUANTUM-WELL HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

JIANG, DS ;

JUNG, H ;

PLOOG, K .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (03) :1371-1377

[10] Characterization of cubic phase MgZnO/Si(100) interfaces [J].

Liang, J ;

Wu, HZ ;

Lao, YF ;

Chen, NB ;

Yu, P ;

Xu, TN .

APPLIED SURFACE SCIENCE, 2005, 252 (04) :1147-1152

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