A 2-V 23-μA 5.3-ppm/°C curvature-compensated CMOS bandgap voltage reference

被引:169
作者
Leung, KN [1 ]
Mok, PKT [1 ]
Leung, CY [1 ]
机构
[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China
关键词
CMOS bandgap reference; curvature compensation; high-resistive poly resistor; line regulation; power-supply noise; power-supply rejection ratio (PSRR); temperature coefficient;
D O I
10.1109/JSSC.2002.808328
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A high-order curvature-compensated CMOS bandgap reference, which utilizes a temperature.-dependent resistor ratio generated by a high-resistive poly resistor and a diffusion resistor, is presented in this paper. Implemented in a standard 0.6-mum CMOS technology with V-thn approximate to \V-thp\ approximate to 0.9 V at 0 degreesC, the proposed voltage reference can. operate down to a 2-V supply and consumes a maximum supply current of 23 muA. A temperature coefficient of 5.3 ppm/degreesC at a 2-V supply and a line regulation of +/-1.43m-V/V at 27degreesC are achieved. Experimental results show that the temperature drift is reduced by approximately five times when compared with a conventional bandgap reference in the same technology.
引用
收藏
页码:561 / 564
页数:4
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