Switching voltage transient protection schemes for high-current IGBT modules

被引：40

作者：

Chokhawala, RS ^{[1
]}

Sobhani, S ^{[1
]}

机构：

[1] INT RECIFIER CORP,EL SEGUNDO,CA 90245

来源：

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS | 1997年 / 33卷 / 06期

关键词：

insulated gate bipolar transistor (IGBT); protections circuits; resistor-capacitor diode (RCD); short-circuit safe operating area (SCSOA); short circuit; switching safe operating area (SSOA); switching transients; voltage clamps;

D O I：

10.1109/28.649974

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The emergence of high-current and faster switching insulated gate bipolar transistor (IGBT) modules has made it imperative for designers to look at ways of protecting these devices against detrimental switching voltage transients that are a common side effect of these efficient transistors, This paper will discuss protection criteria for both normal switching operation and short-circuit operation and will cover in detail some of the protection schemes that were designed to address these problems.

引用

页码：1601 / 1610

页数：10