Texture size control by mixing glass microparticles with alkaline solution for crystalline silicon solar cells

被引:8
作者
Cong Thanh Nguyen [1 ]
Koyama, Koichi [1 ,2 ]
Huynh Thi Cam Tu [1 ]
Ohdaira, Keisuke [1 ]
Matsumura, Hideki [1 ]
机构
[1] Japan Adv Inst Sci & Technol JAIST, Ctr Nano Mat & Technol CNMT, Nomi, Ishikawa 9231292, Japan
[2] ULVAC Inc ULVAC, Chigasaki, Kanagawa 2538543, Japan
关键词
crystalline; Si; texture;
D O I
10.1557/jmr.2018.151
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, we show a novel method to obtain small size textures usable in crystalline silicon (c-Si) solar cells. SiO2-based glass microparticles are mixed with a conventional KOH-based alkaline solution for making the textures. Using this mixing method, the texture size can be drastically reduced from 10 to <= 2 mu m (0.3-2 mu m). In addition, the process time and c-Si loss during the texture formation are reduced from 25 to 2 min and from 20 to 2 mu m, respectively. Thus, the process is applicable to c-Si with thickness down to 50 mu m. High-quality passivation showing the effective minority carrier lifetimes (tau(eff)) larger than several ms and effective antireflection coating are possible on the new textures. The process is named "microparticle-assisted texturing (MPAT) process", and its features are also demonstrated.
引用
收藏
页码:1515 / 1522
页数:8
相关论文
共 7 条
[1]   Novel chemical cleaning of textured crystalline silicon for realizing surface recombination velocity &lt;0.2 cm/s using passivation catalytic CVD SiNx/amorphous silicon stacked layers [J].
Cong Thanh Nguyen ;
Koyama, Koichi ;
Higashimine, Koichi ;
Terashima, Shigeki ;
Okamoto, Chikao ;
Sugiyama, Shuichiro ;
Ohdaira, Keisuke ;
Matsumura, Hideki .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (05)
[2]   THE BLACK SILICON METHOD - A UNIVERSAL METHOD FOR DETERMINING THE PARAMETER SETTING OF A FLUORINE-BASED REACTIVE ION ETCHER IN DEEP SILICON TRENCH ETCHING WITH PROFILE CONTROL [J].
JANSEN, H ;
DEBOER, M ;
LEGTENBERG, R ;
ELWENSPOEK, M .
JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 1995, 5 (02) :115-120
[3]   Extremely low surface recombination velocities on crystalline silicon wafers realized by catalytic chemical vapor deposited SiNx/a-Si stacked passivation layers [J].
Koyama, Koichi ;
Ohdaira, Keisuke ;
Matsumura, Hideki .
APPLIED PHYSICS LETTERS, 2010, 97 (08)
[4]   Damage studies in dry etched textured silicon surfaces [J].
Kumaravelu, G ;
Alkaisi, MM ;
Bittar, A ;
Macdonald, D ;
Zhao, J .
CURRENT APPLIED PHYSICS, 2004, 4 (2-4) :108-110
[5]  
Nguyen C.T., 2016, 43 IEEE PHOT SPEC C
[6]   ANISOTROPIC ETCHING OF CRYSTALLINE SILICON IN ALKALINE-SOLUTIONS .1. ORIENTATION DEPENDENCE AND BEHAVIOR OF PASSIVATION LAYERS [J].
SEIDEL, H ;
CSEPREGI, L ;
HEUBERGER, A ;
BAUMGARTEL, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (11) :3612-3626
[7]   Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 26% [J].
Yoshikawa, Kunta ;
Kawasaki, Hayato ;
Yoshida, Wataru ;
Irie, Toru ;
Konishi, Katsunori ;
Nakano, Kunihiro ;
Uto, Toshihiko ;
Adachi, Daisuke ;
Kanematsu, Masanori ;
Uzu, Hisashi ;
Yamamoto, Kenji .
NATURE ENERGY, 2017, 2 (05)