Spatially resolved determination of dark saturation current and series resistance of silicon solar cells

被引：95

作者：

Glatthaar, Markus ^{[1
]}

Haunschild, Jonas ^{[1
,2
]}

Kasemann, Martin ^{[1
,2
]}

Giesecke, Johannes ^{[1
]}

Warta, Wilhelm ^{[1
]}

Rein, Stefan ^{[1
]}

机构：

[1] ISE, Fraunhofer Inst Solare Energiesyst, D-79110 Freiburg, Germany

[2] Freiburger Mat Forschungszentrum, D-79104 Freiburg, Germany

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2010年 / 4卷 / 1-2期

关键词：

D O I：

10.1002/pssr.200903290

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Luminescence images of silicon solar cells contain information about local recombination properties and local series resistance. It is difficult to separate the information and interpret single images correctly and quantitatively though, which greatly limits the use of single luminescence images, in particular for the application as an in-production characterization tool. We therefore developed a fast method based on photoluminescence imaging for a spatially resolved coupled determination of the dark saturation current and series resistance (C-DCR). (C) 2010 WILEY-VCH Veriag GmbH & Co. KGaA, Weinheim

引用

页码：13 / 15

页数：3

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