Improved sidewall morphology on dry-etched SiO2 masked GaN features

A number of different methods have been investigated for minimizing sidewall roughness on dry etched GaN features formed using high density plasmas. In many instances, striations on dry etched mesas are a result of roughness in the initial photoresist mask employed, and this roughness is transferred sequentially to the dielectric mask and then to the GaN. Flood exposure of the photoresist, optimization of the bake temperature, choice of plasma chemistry, and ion flux/energy for patterning the dielectric mask all influence the final GaN sidewall morphology.