The role of oxygen vacancies on the weak localization in LaNiO3-δ epitaxial thin films

被引：9
|
作者：
Walke, P. [1 ,2 ]
Gupta, S. [2 ]
Li, Q. R. [1 ,3 ]
Major, M. [3 ]
Donner, W. [3 ]
Mercey, B. [1 ]
Luders, U. [1 ]
机构：
[1] CNRS, CRISMAT, ENSICAEN, UMR 6508, 6 Blvd Marechal Juin, F-14050 Caen 4, France
[2] Univ Mumbai, Natl Ctr Nanosci & Nanotechnol, Bombay 400098, Maharashtra, India
[3] Tech Univ Darmstadt, Inst Mat Wissensch, D-64287 Darmstadt, Germany
来源：
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2018年 / 123卷
关键词：
Weak localization; Epitaxial film; Stoichiometry; Quantum transport; ELECTRONIC-PROPERTIES; PEROVSKITE LANIO3;
D O I：
10.1016/j.jpcs.2018.07.003
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We report on the analysis of weak localization observed in epitaxial films of LaNiO3-delta deposited coherently on SrTiO3 (001) substrates using different oxygen pressures, controlling thus the oxygen stoichiometry delta. The structural and transport properties of 10 nm thick LaNiO3-delta films were investigated. In the films deposited under the lowest oxygen pressures, we observe localization effects at low temperatures, indicating first a high structural quality of the films, and second an influence of the growth conditions on the quantum transport properties of the nickelate. We will discuss the origin as well as the dimensionality of this effect, giving insight into novel and accurate strategies for the design of ultrathin LaNiO3 electrodes for improved next generation electronics devices.
引用
收藏
页码：1 / 5
页数：5
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