A 7.3 THz Cut-Off Frequency, Inline, Chalcogenide Phase-Change RF Switch Using an Independent Resistive Heater for Thermal Actuation

被引：0

作者：

El-Hinnawy, Nabil ^{[1
]}

Borodulin, Pavel ^{[1
]}

Wagner, Brian P. ^{[1
]}

King, Matthew R. ^{[1
]}

Mason, John S., Jr. ^{[1
]}

Jones, Evan B. ^{[1
]}

Veliadis, Victor ^{[1
]}

Howell, Robert S. ^{[1
]}

Young, Robert M. ^{[1
]}

Lee, Michael J. ^{[1
]}

机构：

[1] Northrop Grumman Elect Syst, Linthicum, MD 21090 USA

来源：

2013 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS): INTEGRATED CIRCUITS IN GAAS, INP, SIGE, GAN AND OTHER COMPOUND SEMICONDUCTORS | 2013年

关键词：

GeTe; Phase Change Switch; PCM; IPCS; Low Loss RF Switch; Chalcogenide;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An inline chalcogenide phase change RF switch utilizing germanium telluride (GeTe) and driven by an integrated, electrically isolated thin film heater for thermal actuation has been fabricated. A voltage or current pulse applied to the heater terminals was used to transition the phase change material between the crystalline and amorphous states. An on-state resistance of 1.2 Omega ( 0.036 Omega-mm), with an off-state capacitance and resistance of 18.1 fF and 112 k Omega respectively were measured. This results in an RF switch cut-off frequency (F-co) of 7.3 THz, and an off/on DC resistance ratio of 9x10(4). The heater pulse power required to switch the GeTe between the two states was as low as 0.5W, with zero power consumption during steady state operation, making it a non-volatile RF switch. To the authors' knowledge, this is the first reported implementation of an RF phase change switch in a 4-terminal, inline configuration.

引用

页数：4

共 13 条

[1] Nanosecond switching in GeTe phase change memory cells
Bruns, G.
Merkelbach, P.
Schlockermann, C.
Salinga, M.
Wuttig, M.
Happ, T. D.
Philipp, J. B.
Kund, M.
[J]. APPLIED PHYSICS LETTERS, 2009, 95 (04)
[2] Phase change memory technology
Burr, Geoffrey W.
Breitwisch, Matthew J.
Franceschini, Michele
Garetto, Davide
Gopalakrishnan, Kailash
Jackson, Bryan
Kurdi, Buelent
Lam, Chung
Lastras, Luis A.
Padilla, Alvaro
Rajendran, Bipin
Raoux, Simone
Shenoy, Rohit S.
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 28 (02): : 223 - 262
[3] Programmable via using indirectly heated phase-change switch for reconfigurable logic applications
Chen, K. N.
Krusin-Elbaum, L.
Newns, D. M.
Elmegreen, B. G.
Cheek, R.
Rana, N.
Young, A. M.
Koester, S. J.
Lam, C.
[J]. IEEE ELECTRON DEVICE LETTERS, 2008, 29 (01) : 131 - 133
[4] Low resistance, high dynamic range reconfigurable phase change switch for radio frequency applications
Chua, E. K.
Shi, L. P.
Zhao, R.
Lim, K. G.
Chong, T. C.
Schlesinger, T. E.
Bain, J. A.
[J]. APPLIED PHYSICS LETTERS, 2010, 97 (18)
[5] El-Hinnawy N., 2013, ELECT DEVI UNPUB AUG
[6] Hansen M, 1985, CONSTITUTION BINARY, P776
[7] Low-cost and nanoscale non-volatile memory concept for future silicon chips
Lankhorst, MHR
Ketelaars, BWSMM
Wolters, RAM
[J]. NATURE MATERIALS, 2005, 4 (04) : 347 - 352
[8] Three-Terminal Probe Reconfigurable Phase-Change Material Switches
Lo, Hsinyi
Chua, Engkeong
Huang, Jian Cheng
Tan, Chun Chia
Wen, Cheng-Yuan
Zhao, Rong
Shi, Luping
Chong, Chong Tow
Paramesh, Jeyanandh
Schlesinger, T. E.
Bain, James A.
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (01) : 312 - 320
[9] Electrical conduction in chalcogenide glasses of phase change memory
Nardone, M.
Simon, M.
Karpov, I. V.
Karpov, V. G.
[J]. JOURNAL OF APPLIED PHYSICS, 2012, 112 (07)
[10] REVERSIBLE ELECTRICAL SWITCHING PHENOMENA IN DISORDERED STRUCTURES
OVSHINSKY, SR
[J]. PHYSICAL REVIEW LETTERS, 1968, 21 (20) : 1450 - +

← 1 2 →