Scaled T-Gate β-Ga2O3 MESFETs With 2.45 kV Breakdown and High Switching Figure of Merit

被引：18

作者：

Dryden, Daniel M. ^{[1
]}

Liddy, Kyle J. ^{[2
]}

Islam, Ahmad E. ^{[2
]}

Williams, Jeremiah C. ^{[2
]}

Walker, Dennis E., Jr. ^{[2
]}

Hendricks, Nolan S. ^{[2
]}

Moser, Neil A. ^{[2
]}

Arias-Purdue, Andrea ^{[3
]}

Sepelak, Nicholas P. ^{[1
]}

DeLello, Kursti ^{[4
]}

Chabak, Kelson D. ^{[2
]}

Green, Andrew J. ^{[2
]}

机构：

[1] KBR Inc, Beavercreek, OH 45431 USA

[2] Sensors Directorate, Air Force Res Lab, Dayton, OH 45431 USA

[3] Teledyne Sci Co, Thousand Oaks, CA 91360 USA

[4] Cornell Univ, Dept Appl & Engn Phys, Ithaca, NY 14850 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2022年 / 43卷 / 08期

关键词：

Field effect transistors; gallium oxide; MESFET; power transistors; ultra wide band gap semiconductors; POWER FIGURE; FIELD; MOSFETS; TRANSISTORS;

D O I：

10.1109/LED.2022.3182575

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate a passivated MESFET fabricated on (010) Si-doped beta-Ga2O3 with breakdown over 2.4 kV without field plates, high Power Figure of Merit (PFOM), and high estimated Huang's Material Figure of Merit (HMFOM), owing to low gate charge and high breakdown. MESFETs with 13 mu m source-drain spacing and 75 nm channel exhibited a current density of 61mA/mm, peak transconductance of 27 mS/mm, and on-resistance of 133 Omega center dot mm. The device showed a PFOM competitive with state-of-the-art beta-Ga2O3 devices and a record high estimated HMFOM for a beta-Ga2O3 device, competitive with commercial wide-band gap devices. This demonstrates high-performance beta-Ga2O3 devices as viable multi-kV high-voltage power switches.

引用

收藏

页码：1307 / 1310

页数：4

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