Infrared studies of silicon carbide.

被引:0
|
作者
Speck, AK
Hofmeister, AM
机构
[1] Univ Illinois, Dept Astron, Urbana, IL 61801 USA
[2] Washington Univ, Dept Earth & Planetary Sci, St Louis, MO 63130 USA
关键词
D O I
暂无
中图分类号
P3 [地球物理学]; P59 [地球化学];
学科分类号
0708 ; 070902 ;
摘要
引用
收藏
页码:A150 / A150
页数:1
相关论文
共 50 条
  • [1] INFRARED ABSORPTION SPECTRUM OF PARAMAGNETIC NITROGEN IN SILICON CARBIDE.
    Vakulenko, O.V.
    Marazeuv, Yu.A.
    Shutov, B.M.
    Soviet Physics, Solid State (English translation of Fizika Tverdogo Tela), 1976, 18 (10): : 1795 - 1797
  • [2] SINTERED SILICON CARBIDE.
    Knoch, H.
    Kracker, J.
    CFI Ceramic Forum International, 1987, 64 (05): : 159 - 163
  • [3] SOLDERING OF SILICON CARBIDE.
    Shibalov, M.V.
    Welding Production (English translation of Svarochnoe Proizvodstvo), 1974, 21 (01): : 56 - 58
  • [4] INFRARED LUMINESCENCE AND ENERGY LEVELS OF DEEP CENTERS IN SILICON CARBIDE.
    Gorban', I.S.
    Slobodyanyuk, A.V.
    Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1976, 10 (06): : 668 - 670
  • [5] Silicon carbide. The forgotten refractory
    Thomson, J.
    Key Engineering Materials, 1991, 53-55 : 575 - 578
  • [6] Sintering Phenomena in Silicon Carbide.
    Kriegesmann, J.
    Keramische Zeitschrift, 1986, 38 (10) : 606 - 608
  • [7] The surface structure of silicon carbide.
    Finch, GI
    Wilman, H
    TRANSACTIONS OF THE FARADAY SOCIETY, 1937, 33 (01): : 0337 - 0339
  • [8] Studies on alleniccalcium carbide.
    Bouis, M
    ANNALES DE CHIMIE FRANCE, 1928, 9 : 402 - 465
  • [9] Oxidation and Strength of Silicon Nitride and Carbide.
    Siebels, Johann E.
    Sprechsaal, 1981, 114 (10): : 766 - 769
  • [10] UNLOCKING THE POTENTIAL OF BETA SILICON CARBIDE.
    Parsons, J.D.
    Bunshah, R.F.
    Stafsudd, O.M.
    1600, (28):