Single electron memory devices based on plasma-derived silicon nanocrystals

被引：23

作者：

Dutta, A ^{[1
]}

Hayafune, Y ^{[1
]}

Oda, S ^{[1
]}

机构：

[1] Tokyo Inst Technol, Res Ctr Quantum Effects Elect, Meguro Ku, Tokyo 1528552, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2000年 / 39卷 / 8B期

关键词：

single electron memory; nanocrystal; silicon; nanodevice; EB-direct writing;

D O I：

10.1143/JJAP.39.L855

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single electron nonvolatile memory devices are fabricated using a narrow and short channel transistor and silicon nanocrystals as a floating gate. The silicon nanocrystals are deposited by very-high-frequency plasma processing, This deposition technique offers not only control of the dot size but also promises precise control of the tunnel oxide thickness. A single electron charging effect is observed for such devices at 77 K.

引用

页码：L855 / L857

页数：3

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