Reliability testing of high-power multi-chip IGBT modules

被引：21

作者：

Lefranc, G ^{[1
]}

Licht, T

Schultz, HJ

Beinert, R

Mitic, G

机构：

[1] Siemens AG, Corp Technol, D-81730 Munich, Germany

[2] Eupec GmbH & Co KG, D-59568 Warstein, Germany

来源：

MICROELECTRONICS RELIABILITY | 2000年 / 40卷 / 8-10期

关键词：

D O I：

10.1016/S0026-2714(00)00185-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Power-cycling tests are among the most important tools used for evaluating the reliability of power modules. They are in most cases carried out at the rated module current and during a relatively short cycle time, i.e. under worst-case operating conditions. Test conditions must be defined which also permit information to be obtained about failure mechanisms in the various parts of the module. This paper describes the measurement of the temperature distribution, the test conditions, the rates of temperature change in modules with 36 semiconductor components as well as the results of power-cycling tests in which the thermomechanical stress principally affects the substrate-baseplate interface. (C) 2000 Elsevier Science I,td. All rights reserved.

引用

页码：1659 / 1663

页数：5