Assessment of quantum yield experiments via full band Monte Carlo simulations

被引：11

作者：

Ghetti, A ^{[1
]}

Alam, MA ^{[1
]}

Bude, J ^{[1
]}

Venturi, F ^{[1
]}

机构：

[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650519

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we present an in-depth analysis of Quantum Yield (QY) data by means of Full Band Monte Carlo (FBMC) simulation including data from stressed oxides. The effect of device structure and initial energy distribution on QY efficiency is explored and the consequences of oxide stress on QY data are analyzed. In particular, we show that: a) there is universal shape far QY curves in fresh oxides independent of oxide thickness and substrate doping; b) QY data can be used to gain important insight into possible Stress Induced Leakage Current (SILC) mechanisms and discriminate between different SILC models.

引用

页码：873 / 876

页数：4