Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide

被引:242
作者
Starschich, S. [1 ]
Menzel, S. [2 ]
Boettger, U. [1 ]
机构
[1] Rhein Westfal TH Aachen, Inst Werkstoffe Elektrotech 2, Sommerfeldstr 24, D-52074 Aachen, Germany
[2] Forschungszentrum Julich, Peter Grunberg Inst 7, D-52425 Julich, Germany
关键词
MECHANISM; FIELD;
D O I
10.1063/1.4940370
中图分类号
O59 [应用物理学];
学科分类号
摘要
The wake-up effect which is observed in ferroelectric hafnium oxide is investigated in yttrium doped hafnium oxide prepared by chemical solution deposition. It can be shown that not the amount of cycles but the duration of the applied electrical field is essential for the wake-up. Temperature dependent wake-up cycling in a range of -160 degrees C to 100 degrees C reveals a strong temperature activation of the wake-up, which can be attributed to ion rearrangement during cycling. By using asymmetrical electrodes, resistive valence change mechanism switching can be observed coincident with ferroelectric switching. From the given results, it can be concluded that redistribution of oxygen vacancies is the origin of the wake-up effect. (C) 2016 AIP Publishing LLC.
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页数:5
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