High-Performance P-Channel Diamond Metal-Oxide-Semiconductor Field-Effect Transistors on H-Terminated (111) Surface

被引：61

作者：

Hirama, Kazuyuki ^{[1
]}

Tsuge, Kyosuke ^{[1
]}

Sato, Syunsuke ^{[1
]}

Tsuno, Tetsuya ^{[1
]}

Jingu, Yoshikatsu ^{[1
]}

Yamauchi, Shintaro ^{[1
]}

Kawarada, Hiroshi ^{[1
]}

机构：

[1] Waseda Univ, Sch Sci & Engn, Shinjyuku Ku, Tokyo 1698555, Japan

来源：

APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 04期

关键词：

MECHANISM;

D O I：

10.1143/APEX.3.044001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Through the enhancement of hole accumulated density near hydrogen-terminated (111) diamond surfaces, low sheet resistance (similar to 5 k Omega/sq) has been obtained compared with widely used (001) diamond surfaces (similar to 10 k Omega/sq). Using the hole accumulation layer channel, a high drain current density of -850 mA/mm was obtained in p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs). This drain current density is the highest value for diamond FETs. The high drain current on the (111) surface is attributed to two factors: The low source and drain resistances owing to the high hole carrier density and the high channel mobility at a high gate-source voltage on the (111) surface. (C) 2010 The Japan Society of Applied Physics

引用

页数：3

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