Evaluation of SiC JFETs for a three-phase current-source rectifier with high switching frequency

被引：33

作者：

Cass, Callaway J. ^{[1
]}

Wang, Yi ^{[2
]}

Burgos, Rolando ^{[1
]}

Chow, T. Paul ^{[2
]}

Wang, Fred ^{[1
]}

Boroyevich, Dushan ^{[1
]}

机构：

[1] Virginia Polytech Inst & State Univ, Ctr Power Elect Syst, 655 Whittemore Hall 0179, Blacksburg, VA 24061 USA

[2] Rensselaer Polytech Inst, CPES, Troy, NY 12180 USA

来源：

APEC 2007: TWENTY-SECOND ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, VOLS 1 AND 2 | 2007年

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/APEX.2007.357537

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper presents the switching characterization of 1200 V, 5 A SiC JFET prototype devices for application in an AC three-phase current-source rectifier (CSR) with a switching frequency of 150 kHz. The result of device on-resistance is shown as a function of junction temperature. Using a simplified gate drive design, the switching characteristics of the SiC MET are measured experimentally at voltage levels up to 600 V, current up to 5 A, junction temperature up to 200 degrees C, and varying gate resistance. From these measurements, the switching times and energies are calculated and plotted for various conditions. Finally, the application of the SiC JFET in the CSR is discussed, and conduction and switching losses are calculated. Results show that the SiC NET provides low switching loss, even at high switching frequencies.

引用

页码：345 / +

页数：3

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