Heteroepitaxial Diamond Growth from the Gas Phase: Problems and Prospects (Review)

被引：4
|
作者：
Linnik, S. A. [1 ]
Zenkin, S. P. [1 ]
Gaydaychuk, A., V [1 ]
机构：
[1] Natl Res Tomsk Polytech Univ, Tomsk 634000, Russia
来源：
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES | 2021年 / 64卷 / 02期
基金：
俄罗斯基础研究基金会;
关键词：
CHEMICAL-VAPOR-DEPOSITION; SINGLE-CRYSTAL DIAMOND; BIAS-ENHANCED NUCLEATION; HIGHLY ORIENTED DIAMOND; THIN-FILMS; EPITAXIAL-GROWTH; CVD DIAMOND; HOMOGENEOUS NUCLEATION; RADIATION HARDNESS; SURFACE-ENERGY;
D O I：
10.1134/S0020441221010280
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The current state of research and new approaches to solving the problem of heteroepitaxy of diamond films from the gas phase are considered. The features of diamond growth from the gas phase, the nucleation processes, texturing, and the main fundamental problems and barriers of heteroepitaxy of single-crystal diamond are described. Recent achievements and potentially promising approaches in this area are considered.
引用
收藏
页码：177 / 189
页数：13
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