Dielectric Charging and Thermally Activated Processes in MEMS Capacitive Switches

被引：0
|
作者：
Papaioannou, George [1 ]
Tavasolian, Negar [2 ]
Goldsmith, Charles [3 ]
Papapolymerou, John [2 ]
机构：
[1] Univ Athens, Athens 15784, Greece
[2] Georgia Inst Technol, Atlanta, GA 30332 USA
[3] Memtron Corp, Plano, TX 75075 USA
来源：
2009 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2009) | 2009年
关键词：
RF-MEMS; TEMPERATURE; MODEL; DEGRADATION; ACTUATION; CURRENTS; MOSFETS; SYSTEMS; VOLTAGE; DEVICES;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
The paper investigates dielectric charging effects for capacitive RF MEMS switches with SiO2 as the dielectric material. Two different actuation schemes are implemented in order to incorporate and better understand the charging history over time. Experimental results indicate that regardless of the actuation scheme the charging is thermally in principle, and that the activation energy decreases as the voltage sweep rate increases.
引用
收藏
页码：399 / +
页数：2
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