Temperature dependent band-gap energy for Cu2ZnSnSe4: A spectroscopic ellipsometric study

被引：25
作者：
Choi, S. G. [1 ]
Kim, T. J. [1 ,2 ]
Hwang, S. Y. [2 ]
Li, J. [3 ]
Persson, C. [4 ]
Kim, Y. D. [2 ]
Wei, S. -H. [1 ]
Repins, I. L. [1 ]
机构：
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
[2] Kyung Hee Univ, Dept Phys, Seoul 130701, South Korea
[3] Univ Toledo, Dept Phys & Astron, Toledo, OH 43606 USA
[4] Univ Oslo, Dept Phys, N-0316 Oslo, Norway
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2014年 / 130卷
基金：
新加坡国家研究基金会;
关键词：
Cu2ZnSnSe4 solar cell; Spectroscopic ellipsometry; Band-gap energy; DIELECTRIC FUNCTION; EFFICIENCY; IV; VI;
D O I：
10.1016/j.solmat.2014.07.039
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Spectroscopic ellipsometry (SE) is used to study the dependence of the band-gap energy for Cu2ZnSnSe4 (CZTSe) on temperature ranging from 50 to 350 K. A CZTSe thin film prepared by the pseudo-bulk approach allows direct observation of the fundamental band-gap E-0(A,B) in the SE data without need for multi-layer modeling. We obtain accurate energy values for E-0(A,B) and its spin-orbit splitting component E-0(C) from standard lineshape analysis of the second-energy-derivative spectra. The E-0(A,B) and E-0(C) energies for CZTSe decrease with increasing temperature, as for many semiconductors, but their temperature dependencies are relatively weak. Our experimental observation can be explained in terms of relatively small change in bond-length and strong p-d states coupling at the valence band maximum. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：375 / 379
页数：5
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