Growth and luminescence properties of Pr-doped LU3(Ga,Al)5O12 single crystals

被引：26
作者：
Ogino, Hiraku
Yoshikawa, Akira
Nikl, Martin
Pejchal, Jan
Fukuda, Tsuguo
机构：
[1] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] Acad Sci Czech Republ, Inst Phys, Prague 16253, Czech Republic
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 6A期
关键词：
scintillator materials; 5d-4f luminescence of Pr3+; solid solutions; single crystal; growth from melt; mu-PD method;
D O I：
10.1143/JJAP.46.3514
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Single crystals with the nominal composition of (Pr-0.01,Lu-0.99)(3)(Ga-x,Al1-x)(5)O-12 (Pr:LuGAG) were grown by the micro-pulling-down (mu-PD) method with RF heating and their luminescence properties were characterized. Transparent and crack free crystals that were slightly yellowish green were obtained. Lattice constants and densities systematically increased with increasing of Ga concentration. The luminescence properties of Pr:LuGAG were characterized by photoluminescence spectra and decays, radioluminescence spectra and light yield measurements. 5d-4f luminescence was observed for the x <= 0.6 samples. It was found that the 5d-4f emission of Pr3+ is quenched only slightly up to x <= 0.4 whereas density systematically increased in the range of 0 <= x <= 1.0.
引用
收藏
页码：3514 / 3517
页数：4
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