(Ga,Fe)Sb: A p-type ferromagnetic semiconductor

被引：46
作者：
Nguyen Thanh Tu [1 ]
Pham Nam Hai [1 ,2 ]
Le Duc Anh [1 ]
Tanaka, Masaaki [1 ]
机构：
[1] Univ Tokyo, Dept Elect Engn & Informat Syst, Bunkyo Ku, Tokyo 1138656, Japan
[2] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1520033, Japan
来源：
APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 13期
关键词：
MOLECULAR-BEAM EPITAXY; III-V SEMICONDUCTORS; MAGNETIC SEMICONDUCTORS; IMPURITIES; (IN; MN)AS; GAAS;
D O I：
10.1063/1.4896539
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A p-type ferromagnetic semiconductor (Ga1-x,Fe-x) Sb (x = 3.9%-13.7%) has been grown by low-temperature molecular beam epitaxy (MBE) on GaAs(001) substrates. Reflection high energy electron diffraction patterns during the MBE growth and X-ray diffraction spectra indicate that (Ga,Fe)Sb layers have the zinc-blende crystal structure without any other crystallographic phase of precipitates. Magnetic circular dichroism (MCD) spectroscopy characterizations indicate that (Ga,Fe)Sb has the zinc-blende band structure with spin-splitting induced by s,p-d exchange interactions. The magnetic field dependence of the MCD intensity and anomalous Hall resistance of (Ga,Fe)Sb show clear hysteresis, demonstrating the presence of ferromagnetic order. The Curie temperature (T-C) increases with increasing x and reaches 140 K at x = 13.7%. The crystal structure analyses, magneto-transport, and magneto-optical properties indicate that (Ga,Fe) Sb is an intrinsic ferromagnetic semiconductor. (C) 2014 AIP Publishing LLC.
引用
收藏
页数：4
相关论文
共 50 条
  • [41] The transparent NiO film ohmic contact to p-type and unintentionally doped In0.53Ga0.47As
    Yang, Dan
    Huang, Yongqing
    Liu, Kai
    Duan, Xiaofeng
    Yang, Yisu
    Ren, Xiaomin
    [J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2021, 131
  • [42] Evaluation of the Ultrafast Thermal Manipulation of Magnetization Precession in Ferromagnetic Semiconductor (Ga,Mn)As
    Li Hang
    Zhang Xin-Hui
    [J]. CHINESE PHYSICS LETTERS, 2015, 32 (06)
  • [43] Nonthermal Photocoercivity Effect in a Low-Doped (Ga,Mn)As Ferromagnetic Semiconductor
    Astakhov, G. V.
    Hoffmann, H.
    Korenev, V. L.
    Kiessling, T.
    Schwittek, J.
    Schott, G. M.
    Gould, C.
    Ossau, W.
    Brunner, K.
    Molenkamp, L. W.
    [J]. PHYSICAL REVIEW LETTERS, 2009, 102 (18)
  • [44] Electric-Field Modulation of Damping Constant in a Ferromagnetic Semiconductor (Ga,Mn) As
    Chen, Lin
    Matsukura, Fumihiro
    Ohno, Hideo
    [J]. PHYSICAL REVIEW LETTERS, 2015, 115 (05)
  • [45] Codoping for the fabrication of p-type ZnO
    Yamamoto, T
    [J]. THIN SOLID FILMS, 2002, 420 : 100 - 106
  • [46] P-type doping of beryllium chalcogenides
    Lugauer, HJ
    Fischer, F
    Litz, T
    Waag, A
    Zehnder, U
    Ossau, W
    Gerhard, T
    Landwehr, G
    Becker, C
    Kruse, R
    Geurts, J
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 43 (1-3): : 88 - 91
  • [47] Location of P and As dopants and p-type doping of ZnO
    Fons, P.
    Kolobov, A. V.
    Tominaga, Junji
    Hyot, Berangere
    Andre, Bernard
    [J]. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2014, 16 (1-2): : 1 - 5
  • [48] Electric field effect on the magnetic properties of III-V ferromagnetic semiconductor (In, Mn)As and ((Al),Ga,Mn)As
    Chiba, D
    Yamanouchi, M
    Matsukura, F
    Abe, E
    Ohno, Y
    Ohtani, K
    Ohno, H
    [J]. JOURNAL OF SUPERCONDUCTIVITY, 2003, 16 (01): : 179 - 182
  • [49] Local N environment in the dilute nitrides Ga(N,P), Ga(N,As), and Ga(N,Sb)
    Guengerich, M.
    Sander, T.
    Heiliger, C.
    Czerner, M.
    Klar, P. J.
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2013, 250 (04): : 755 - 759
  • [50] Nano-Schottky barrier diodes based on Sb-doped ZnS nanoribbons with controlled p-type conductivity
    Peng, Qiang
    Jie, Jiansheng
    Xie, Chao
    Wang, Li
    Zhang, Xiwei
    Wu, Di
    Yu, Yongqiang
    [J]. APPLIED PHYSICS LETTERS, 2011, 98 (12)
12345