(Ga,Fe)Sb: A p-type ferromagnetic semiconductor

被引：46

作者：

Nguyen Thanh Tu ^{[1
]}

Pham Nam Hai ^{[1
,2
]}

Le Duc Anh ^{[1
]}

Tanaka, Masaaki ^{[1
]}

机构：

[1] Univ Tokyo, Dept Elect Engn & Informat Syst, Bunkyo Ku, Tokyo 1138656, Japan

[2] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1520033, Japan

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 13期

关键词：

MOLECULAR-BEAM EPITAXY; III-V SEMICONDUCTORS; MAGNETIC SEMICONDUCTORS; IMPURITIES; (IN; MN)AS; GAAS;

D O I：

10.1063/1.4896539

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A p-type ferromagnetic semiconductor (Ga1-x,Fe-x) Sb (x = 3.9%-13.7%) has been grown by low-temperature molecular beam epitaxy (MBE) on GaAs(001) substrates. Reflection high energy electron diffraction patterns during the MBE growth and X-ray diffraction spectra indicate that (Ga,Fe)Sb layers have the zinc-blende crystal structure without any other crystallographic phase of precipitates. Magnetic circular dichroism (MCD) spectroscopy characterizations indicate that (Ga,Fe)Sb has the zinc-blende band structure with spin-splitting induced by s,p-d exchange interactions. The magnetic field dependence of the MCD intensity and anomalous Hall resistance of (Ga,Fe)Sb show clear hysteresis, demonstrating the presence of ferromagnetic order. The Curie temperature (T-C) increases with increasing x and reaches 140 K at x = 13.7%. The crystal structure analyses, magneto-transport, and magneto-optical properties indicate that (Ga,Fe) Sb is an intrinsic ferromagnetic semiconductor. (C) 2014 AIP Publishing LLC.

引用

页数：4

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