fT-Integrator in digital CMOS process for continuous-time ΣΔ modulator

被引:0
作者
Khumsat, P
Worapishet, A
Burdett, A
机构
来源
ICES 2002: 9TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS, VOLS I-111, CONFERENCE PROCEEDINGS | 2002年
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中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
The f(T)-integration technique is further investigated through the use of pnp transistors commonly available in a mainstream digital CMOS process. Both lateral and vertical pnps have been employed in f(T)-integrator design. The integrator is used as a building block for a single-bit second-order lowpass continuous-time SigmaDelta modulator. The modulator prototype is fabricated in a digital 0.8mum CMOS technology and the measured results clearly confirm functionality of the proposed concept. The modulator chip operates at 320MHz clock speed from 3V supply with a maximum SNDR of 32dB and 38dB dynamic range for 4MHz signal bandwidth (OSR=40).
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页码:323 / 326
页数:4
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