Pulsed-laser treatment of solution-grown ZnO nanowires in nitrogen: Enhancing in electrical conduction and field emission

被引:11
作者
Chen, J. B. [1 ]
Xu, C. J. [1 ]
She, J. C. [1 ]
Deng, S. Z. [1 ]
Chen, Jun [1 ]
Xu, N. S. [1 ]
机构
[1] Sun Yat Sen Univ, Sch Phys & Engn, Guangdong Prov Key Lab Display Mat & Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
基金
中国国家自然科学基金;
关键词
current density; electrical conductivity; electron field emission; II-VI semiconductors; laser materials processing; nanowires; nitrogen; semiconductor doping; wide band gap semiconductors; X-ray photoelectron spectra; zinc compounds; ONE-DIMENSIONAL NANOSTRUCTURES; ZINC-OXIDE NANOWIRES; LOW-TEMPERATURE; NANOROD ARRAYS; SEED-LAYER; PHOTOLUMINESCENCE; ROUTE; SI;
D O I
10.1063/1.3284948
中图分类号
O59 [应用物理学];
学科分类号
摘要
Pulsed-laser (neodymium doped yttrium aluminum garnet; 1.06 mu m in wavelength) treatments were performed on zinc oxide (ZnO) nanowires (NWs) in nitrogen. It results in nitrogen doping of ZnO, mainly with chemical states of N(2) at oxygen sites, which is demonstrated by x-ray photoelectron spectroscopy studies. The laser treated ZnO NWs show significant improvement in electrical conduction and field emission. Typically, with the critical treated conditions of peak power 400 W and pulse duration 2 ms, NWs with the highest conductivity of 1.43x10(-2) S/cm was obtained. It is one order of magnitude higher than that of the as-prepared NWs (1.20x10(-3) S/cm). These NWs show better field electron emission properties. The turn-on field is 2.0 MV/m and a current density of 5.3 mA/cm(2) can be obtained at a field of 3.0 MV/m. The underlying mechanisms related to the enhancing effect of conduction and field emission were discussed. The pulsed-laser treatment may be developed toward a technique for application in the study of nanoelectronic devices using NWs.
引用
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页数:6
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共 42 条
[1]   Controlled selective growth of ZnO nanorod arrays and their field emission properties [J].
Ahsanulhaq, Q. ;
Kim, Jin-Hwan ;
Hahn, Yoon-Bong .
NANOTECHNOLOGY, 2007, 18 (48)
[2]  
Cao BQ, 2007, J PHYS CHEM C, V111, P2470, DOI 10.1021/jp0666611
[3]   ZnO Nanowire Field-Effect Transistors [J].
Chang, Pai-Chun ;
Lu, Jia Grace .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (11) :2977-2987
[4]   FIRST-PRINCIPLES STUDY OF THE COMPENSATION MECHANISM FOR NITROGEN ACCEPTORS IN ZNSE [J].
CHEONG, BH ;
PARK, CH ;
CHANG, KJ .
PHYSICAL REVIEW B, 1995, 51 (16) :10610-10614
[5]   Soft solution route to directionally grown ZnO nanorod arrays on Si wafer; room-temperature ultraviolet laser [J].
Choy, JH ;
Jang, ES ;
Won, JH ;
Chung, JH ;
Jang, DJ ;
Kim, YW .
ADVANCED MATERIALS, 2003, 15 (22) :1911-+
[6]   Excimer laser crystallization techniques for polysilicon TFTs [J].
Fortunato, G ;
Mariucci, L ;
Carluccio, R ;
Pecora, A ;
Foglietti, V .
APPLIED SURFACE SCIENCE, 2000, 154 :95-104
[7]   Solution-derived ZnO nanowire array film as photoelectrode in dye-sensitized solar cells [J].
Gao, Yanfeng ;
Nagai, Masayuki ;
Chang, Tien-Chih ;
Shyue, Jing-Jong .
CRYSTAL GROWTH & DESIGN, 2007, 7 (12) :2467-2471
[8]   Solvothermal Synthesis, Cathodoluminescence, and Field-Emission Properties of Pure and N-Doped ZnO Nanobullets [J].
Gautam, Ujjal K. ;
Panchakarla, L. S. ;
Dierre, Benjamin ;
Fang, Xiaosheng ;
Bando, Yoshio ;
Sekiguchi, Takashi ;
Govindaraj, A. ;
Golberg, Dmitri ;
Rao, C. N. R. .
ADVANCED FUNCTIONAL MATERIALS, 2009, 19 (01) :131-140
[9]   Solution-grown zinc oxide nanowires [J].
Greene, Lori E. ;
Yuhas, Benjamin D. ;
Law, Matt ;
Zitoun, David ;
Yang, Peidong .
INORGANIC CHEMISTRY, 2006, 45 (19) :7535-7543
[10]   ZnO nanorod light-emitting diodes fabricated by electrochemical approaches [J].
Guo, Honghui ;
Zhou, Jianzhang ;
Lin, Zhonghua .
ELECTROCHEMISTRY COMMUNICATIONS, 2008, 10 (01) :146-150