Role of surface oxidation for thickness-driven insulator-to-metal transition in epitaxial MoO2 films

被引:10
作者
Ahn, Eunyoung [1 ,2 ]
Min, Taewon [1 ]
Lee, Jaekwang [1 ]
Lee, Inwon [3 ]
Kim, Younghak [4 ]
Jeen, Hyoungjeen [1 ]
机构
[1] Pusan Natl Univ, Dept Phys, Busan 46241, South Korea
[2] Pusan Natl Univ, Extreme Phys Inst, Busan 46241, South Korea
[3] Pusan Natl Univ, Dept Naval Architecture & Ocean Engn, Busan 46241, South Korea
[4] Pohang Univ Sci & Technol, Pohang Accelerator Lab, Pohang 37673, South Korea
基金
新加坡国家研究基金会;
关键词
Epitaxial thin films; Metal-to-insulator transition; Surface oxidation; Density functional theory; Spectroscopy; PHOTOELECTRON-SPECTROSCOPY; FACILE SYNTHESIS; GREEN SYNTHESIS; THIN-FILMS; MOLYBDENUM; NANOCOMPOSITES; MAGNETORESISTANCE; INTERCALATION; TEMPERATURE; NANOIONICS;
D O I
10.1016/j.apsusc.2018.07.188
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Interfaces in transition metal oxides play critical roles for tuning physical properties. In thin film form, multiple interfaces can be created in between a film and a substrate, in between a film and air, and within a thin film. The role of each interface has been rarely studied. In this research, we used MoO2 as a model system to study the role of the oxidized layer at film-air interface in thickness-driven metal-insulator transition. The oxidized layer at the surface is likely to be the main cause in positive temperature coefficient of resistivity in MoO2 thin films thinner than about 20 nm. To find the origin of this insulating behavior in electronic transport measurements, we used x-ray diffraction, density functional theory and various spectroscopic methods. We observed the formation of oxidized MoO2+x at the film-air interface and its thickness explain the peculiar insulating behavior in the thinner films and even nanoparticles from the literature.
引用
收藏
页码:92 / 97
页数:6
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