Epitaxial Growth Processes of Graphene on Silicon Substrates

被引：48

作者：

Fukidome, Hirokazu ^{[1
]}

Miyamoto, Yu ^{[1
]}

Handa, Hiroyuki ^{[1
,2
]}

Saito, Eiji ^{[1
,2
]}

Suemitsu, Maki ^{[1
,2
]}

机构：

[1] Tohoku Univ, Res Inst Elect Commun, Sendai, Miyagi 9808577, Japan

[2] Japan Sci & Technol Agcy, CREST, Chiyoda Ku, Tokyo 1070075, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 01期

关键词：

RAMAN-SPECTRUM; SPECTROSCOPY; FILM;

D O I：

10.1143/JJAP.49.01AH03

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Few-layers graphene is epitaxially grown on silicon substrates via SiC thin films inserted in between. We have conducted a detailed structural characterization of this graphene-on-silicon (GOS) material by Raman spectroscopy and transmission-electron microscopy, to obtain insights into the impacts of process parameters on defect formation. Results suggest that defects in graphene preferentially dwell at steps. Future flattening of the SiC surface, prior to graphene growth, is thus expected to contribute to the improvement of GOS quality. (C) 2010 The Japan Society of Applied Physics

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页数：4

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