Isolated Spin Qubits in SiC with a High-Fidelity Infrared Spin-to-Photon Interface

被引:187
作者
Christle, David J. [1 ]
Klimov, Paul V. [1 ]
Casas, Charles F. de las [1 ]
Szasz, Krisztian [2 ]
Ivady, Viktor [2 ,3 ]
Jokubavicius, Valdas [3 ]
Hassan, Jawad Ul [3 ]
Syvajarvi, Mikael [3 ]
Koehl, William F. [1 ]
Ohshima, Takeshi [4 ]
Son, Nguyen T. [3 ]
Janzen, Erik [3 ]
Gali, Adam [2 ,5 ]
Awschalom, David D. [1 ]
机构
[1] Univ Chicago, Inst Mol Engn, Chicago, IL 60637 USA
[2] Hungarian Acad Sci, Inst Solid State Phys & Opt, Wigner Res Ctr Phys, POB 49, H-1525 Budapest, Hungary
[3] Linkoping Univ, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden
[4] Natl Inst Quantum & Radiol Sci & Technol, 1233 Watanuki, Takasaki, Gunma 3701292, Japan
[5] Budapest Univ Technol & Econ, Dept Atom Phys, Budafoki Ut 8, H-1111 Budapest, Hungary
来源
PHYSICAL REVIEW X | 2017年 / 7卷 / 02期
基金
瑞典研究理事会;
关键词
SILICON-CARBIDE; ELECTRON SPINS; STATE; DEFECT; ENTANGLEMENT; DIVACANCY; GROWTH; COHERENCE; RESONANCE;
D O I
10.1103/PhysRevX.7.021046
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The divacancies in SiC are a family of paramagnetic defects that show promise for quantum communication technologies due to their long-lived electron spin coherence and their optical addressability at near-telecom wavelengths. Nonetheless, a high-fidelity spin-photon interface, which is a crucial prerequisite for such technologies, has not yet been demonstrated. Here, we demonstrate that such an interface exists in isolated divacancies in epitaxial films of 3C-SiC and 4H-SiC. Our data show that divacancies in 4H-SiC have minimal undesirable spin mixing, and that the optical linewidths in our current sample are already similar to those of recent remote entanglement demonstrations in other systems. Moreover, we find that 3C-SiC divacancies have a millisecond Hahn-echo spin coherence time, which is among the longest measured in a naturally isotopic solid. The presence of defects with these properties in a commercial semiconductor that can be heteroepitaxially grown as a thin film on Si shows promise for future quantum networks based on SiC defects.
引用
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页数:12
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