Self-organized high aspect ratio porous hafnium oxide prepared by electrochemical anodization

被引:213
作者
Tsuchiya, H [1 ]
Schmuki, P [1 ]
机构
[1] Univ Erlangen Nurnberg, Inst Surface Sci & Corros LKO, Dept Mat Sci, D-91058 Erlangen, Germany
关键词
self-organization; hafnium oxide; electrochemical anodization; nanoporous; nanotubes;
D O I
10.1016/j.elecom.2004.11.004
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
We report on the fabrication of self-organized porous hafnium oxide layers by anodization of hafnium in H2SO4 electrolytes containing NaF. The results show that porous hafnium oxide layers can be formed under a range of experimental conditions. A key factor affecting the morphology and the structure of porous oxide is the anodization potential. Using optimized anodization conditions, highly ordered tube-like porous structures can be formed. The pore diameter increases with increasing potential from approximately 15 to 90 nm. The porous oxide layers can be grown to thickness of several tens micrometer and therefore possess aspect ratios comparable to the best self-organizing systems reported previously in the literature. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:49 / 52
页数:4
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共 25 条
  • [1] Self-organized porous titanium oxide prepared in H2SO4/HF electrolytes
    Beranek, R
    Hildebrand, H
    Schmuki, P
    [J]. ELECTROCHEMICAL AND SOLID STATE LETTERS, 2003, 6 (03) : B12 - B14
  • [2] Physical characterization of hafnium oxide thin films and their application as gas sensing devices
    Capone, S
    Leo, G
    Rella, R
    Siciliano, P
    Vasanelli, L
    Alvisi, M
    Mirenghi, L
    Rizzo, A
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (06): : 3564 - 3568
  • [3] Properties of annealed anodically etched porous Zn studied by scanning tunneling microscopy
    Chang, SS
    Kurokawa, S
    Sakai, A
    [J]. APPLIED SURFACE SCIENCE, 2003, 217 (1-4) : 50 - 55
  • [4] Improved photoluminescence properties of oxidized anodically etched porous Zn
    Chang, SS
    Park, CH
    Park, SW
    [J]. MATERIALS CHEMISTRY AND PHYSICS, 2003, 79 (01) : 9 - 14
  • [5] Ellipsometric investigation of anodic hafnium oxide films
    Esplandiu, MJ
    Patrito, EM
    Macagno, VA
    [J]. ELECTROCHIMICA ACTA, 1997, 42 (09) : 1315 - 1324
  • [6] CHARACTERIZATION OF HAFNIUM OXIDE-FILMS MODIFIED BY PT DOPING
    ESPLANDIU, MJ
    AVALLE, LB
    MACAGNO, VA
    [J]. ELECTROCHIMICA ACTA, 1995, 40 (16) : 2587 - 2593
  • [7] CHARACTERIZATION OF HAFNIUM ANODIC OXIDE-FILMS - AN AC-IMPEDANCE INVESTIGATION
    ESPLANDIU, MJ
    PATRITO, EM
    MACAGNO, VA
    [J]. ELECTROCHIMICA ACTA, 1995, 40 (07) : 809 - 815
  • [8] Study of HfO2 films prepared by ion-assisted deposition using a gridless end-hall ion source
    Gilo, M
    Croitoru, N
    [J]. THIN SOLID FILMS, 1999, 350 (1-2) : 203 - 208
  • [9] Titanium oxide nanotube arrays prepared by anodic oxidation
    Gong, D
    Grimes, CA
    Varghese, OK
    Hu, WC
    Singh, RS
    Chen, Z
    Dickey, EC
    [J]. JOURNAL OF MATERIALS RESEARCH, 2001, 16 (12) : 3331 - 3334
  • [10] SMALL QUANTUM-SIZED CDS PARTICLES ASSEMBLED TO FORM A REGULARLY NANOSTRUCTURED POROUS FILM
    HOYER, P
    BABA, N
    MASUDA, H
    [J]. APPLIED PHYSICS LETTERS, 1995, 66 (20) : 2700 - 2702