Formation Mechanism of a Rounded SiGe-Etch-Front in an Isotropic Dry SiGe Etch Process for Gate-All-Around (GAA)-FETs

被引：16

作者：

Zhao, Yu ^{[1
]}

Iwase, Taku ^{[1
]}

Satake, Makoto ^{[1
]}

Hamamura, Hirotaka ^{[1
]}

机构：

[1] Hitachi Ltd, Tokyo, Japan

来源：

2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM) | 2021年

关键词：

Isotropic Dry Etch; SiGe; GAA-FET;

D O I：

10.1109/EDTM50988.2021.9421041

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated the formation mechanism of a rounded SiGe-etch-front (rounding), which causes low yield in GAA-FET manufacturing. The dependence on time of isotropic SiGe etching using NF3 plasma indicated that rounding was formed in the initial stage of the etch. The STEM-EDX results indicated that a Ge-containing surface layer, which was created in anisotropic patterning before isotropic etching, likely induced the rounding. The rounding amount was reduced by 33% using an improved anisotropic etch process.

引用

页数：3

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