Intrinsic strain modeling and residual stress analysis for thin-film processing of layered structures

被引:29
作者
Nejhad, MNG [1 ]
Pan, CL [1 ]
Feng, HW [1 ]
机构
[1] Univ Hawaii Manoa, Dept Mech Engn, Honolulu, HI 96822 USA
关键词
D O I
10.1115/1.1512295
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Residual stresses develop due to intrinsic and extrinsic strains that form during the processing. Extrinsic strains can be determined using coefficient of thermal expansion, material properties, and processing conditions. An "Equivalent Reference Temperature (ERT)" technique is described and used to model and evaluate the intrinsic strains. piezoelectric microelectromechanical systems (P-MEMS) are considered in this work. Laminate theory with three-dimensional state of stress and strain is used to evaluate residual stresses using the ERT model. In finite element analysis (FEA), the residual stresses and strains of multi-layer P-MEMS structures deposited layer-by-layer during processing, are simulated using the "element birth-and-death" approach. The evaluated residual stresses for a simplified geometry using ANSYS three-dimensional FEA and analytical analysis employing three-dimensional laminate theory are presented along with their corresponding experimental results. A user-friendly software based on the 3-D laminate theory is developed and installed on the Internet. The "equivalent reference temperature " as well as residual stresses and strains can be determined using this software. The level of residual stresses and strains of P-MEMS depend upon various factors such as geometrical design, material selection, and process conditions.
引用
收藏
页码:4 / 17
页数:14
相关论文
共 47 条
  • [1] Efficient reduced order modeling for system simulation of micro electro mechanical systems (MEMS) from FEM models
    Affour, B
    Nachtergaele, P
    Spirkovitch, S
    Ostergaard, D
    Gyimesi, M
    [J]. DESIGN, TEST, INTEGRATION, AND PACKAGING OF MEMS/MOEMS, PROCEEDINGS, 2000, 4019 : 50 - 54
  • [2] AGARWAL BD, 1990, ANAL PERFORMANCE FIB, P232
  • [3] *ANSYS INC, 1998, ANSYS US MAN REV 5 5
  • [4] FINITE-ELEMENT MODELING AND CHARACTERIZATION OF A SILICON CONDENSER MICROPHONE WITH A HIGHLY PERFORATED BACKPLATE
    BERGQVIST, J
    [J]. SENSORS AND ACTUATORS A-PHYSICAL, 1993, 39 (03) : 191 - 200
  • [5] BILL B, 1989, TRANSD 89 5 INT C SO, P1229
  • [6] PROCESS-INDUCED STRESS AND DEFORMATION IN THICK-SECTION THERMOSET COMPOSITE LAMINATES
    BOGETTI, TA
    GILLESPIE, JW
    [J]. JOURNAL OF COMPOSITE MATERIALS, 1992, 26 (05) : 626 - 660
  • [7] CADY WG, 1964, PIEZOELECTRICITY INT, V1, P11
  • [8] INTEGRATED SILICON PI-FET ACCELEROMETER WITH PROOF MASS
    CHEN, PL
    MULLER, RS
    ANDREWS, AP
    [J]. SENSORS AND ACTUATORS, 1984, 5 (02): : 119 - 126
  • [9] CHEN PL, 1982, IEEE T ELECTRON DEV, V29, P27, DOI 10.1109/T-ED.1982.20654
  • [10] Cifuentes A. O., 1993, Transactions of the ASME. Journal of Electronic Packaging, V115, P392, DOI 10.1115/1.2909348