Giant magnetoelectric coefficients in (Fe90Co10)78Si12B10-AlN thin film composites

被引：211

作者：

Greve, Henry ^{[1
]}

Woltermann, Eric ^{[1
]}

Quenzer, Hans-Joachim ^{[2
]}

Wagner, Bernhard ^{[2
]}

Quandt, Eckhard ^{[1
]}

机构：

[1] Univ Kiel, Inst Mat Sci, D-24143 Kiel, Germany

[2] Fraunhofer Inst Silicon Technol ISIT, D-25524 Itzehoe, Germany

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 18期

关键词：

aluminium compounds; amorphous magnetic materials; boron alloys; cobalt alloys; composite materials; ferromagnetic materials; III-V semiconductors; iron alloys; magnetic anisotropy; magnetic annealing; magnetic field measurement; magnetic sensors; magnetoelectric effects; silicon; silicon alloys; sputtered coatings; thin films; wide band gap semiconductors; TRANSVERSE;

D O I：

10.1063/1.3377908

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin film magnetoelectric (ME) two-two composites consisting of AlN and amorphous (Fe90Co10)(78)Si12B10 layers were fabricated by magnetron sputtering on Si (100) substrates. Upon magnetic field annealing they show an extremely high ME coefficient of 737 V/cm Oe at mechanical resonance at 753 Hz and 3.1 V/cm Oe out of resonance at 100 Hz. These are the highest reported ME coefficients in thin film composites ever. Furthermore, the induced magnetic anisotropy by field annealing serves the possibility to obtain a sensor element with a pronounced sensitivity in only one dimension, which allows the realization of a three-dimensional vector field sensor. (C) 2010 American Institute of Physics. [doi:10.1063/1.3377908]

引用

页数：3

共 19 条

[1] Push-pull mode magnetostrictive/piezoelectric laminate composite with an enhanced magnetoelectric voltage coefficient [J].