Low defect-mediated reverse-bias leakage in (0001) GaN via high-temperature molecular beam epitaxy

被引：33

作者：

Law, J. J. M. ^{[1
]}

Yu, E. T. ^{[1
]}

Koblmueller, G. ^{[2
]}

Wu, F. ^{[2
]}

Speck, J. S. ^{[2
]}

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 10期

关键词：

SCREW DISLOCATIONS; SCHOTTKY DIODES;

D O I：

10.1063/1.3360227

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Conductive atomic force microscopy, scanning electron microscopy, and x-ray diffraction were used to determine the effects of Ga/N flux ratio on the conductivity of current leakage paths in GaN grown by molecular beam epitaxy. Our data reveal a band of fluxes near Ga/N approximate to 1 for which these pathways ceased to be observable. We conclude that changes in surface defects surrounding or impurities along screw-component threading dislocations are responsible for their conductive nature. These observations suggest a method for controlling the primary source of reverse-bias Schottky contact leakage in n-type GaN grown by molecular beam epitaxy. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3360227]

引用

页数：3

共 14 条

[1] In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction [J].

Fernandez-Garrido, S. ;

Koblmueller, G. ;

Calleja, E. ;

Speck, J. S. .

JOURNAL OF APPLIED PHYSICS, 2008, 104 (03)

[2] Dislocation mediated surface morphology of GaN [J].

Heying, B ;

Tarsa, EJ ;

Elsass, CR ;

Fini, P ;

DenBaars, SP ;

Speck, JS .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (09) :6470-6476

[3] Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates [J].

Hsu, JWP ;

Manfra, MJ ;

Molnar, RJ ;

Heying, B ;

Speck, JS .

APPLIED PHYSICS LETTERS, 2002, 81 (01) :79-81

[4] Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes [J].

Hsu, JWP ;

Manfra, MJ ;

Lang, DV ;

Richter, S ;

Chu, SNG ;

Sergent, AM ;

Kleiman, RN ;

Pfeiffer, LN ;

Molnar, RJ .

APPLIED PHYSICS LETTERS, 2001, 78 (12) :1685-1687

[5] Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy [J].

Hsu, JWP ;

Manfra, MJ ;

Chu, SNG ;

Chen, CH ;

Pfeiffer, LN ;

Molnar, RJ .

APPLIED PHYSICS LETTERS, 2001, 78 (25) :3980-3982

[6] High electron mobility GaN grown under N-rich conditions by plasma-assisted molecular beam epitaxy [J].

Koblmueller, G. ;

Wu, F. ;

Mates, T. ;

Speck, J. S. ;

Fernandez-Garrido, S. ;

Calleja, E. .

APPLIED PHYSICS LETTERS, 2007, 91 (22)

[7] In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001) GaN [J].

Koblmuller, G. ;

Fernandez-Garrido, S. ;

Calleja, E. ;

Speck, J. S. .

APPLIED PHYSICS LETTERS, 2007, 91 (16)

[8] Formation mechanism of nanotubes in GaN [J].

LilientalWeber, Z ;

Chen, Y ;

Ruvimov, S ;

Washburn, J .

PHYSICAL REVIEW LETTERS, 1997, 79 (15) :2835-2838

[9] High-resolution X-ray diffraction analysis on HVPE-grown thick GaN layers [J].

Liu, J. Q. ;

Wang, J. F. ;

Liu, Y. F. ;

Huang, K. ;

Hu, X. J. ;

Zhang, Y. M. ;

Xu, Y. ;

Xu, K. ;

Yang, H. .

JOURNAL OF CRYSTAL GROWTH, 2009, 311 (10) :3080-3084

[10] Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope [J].

Miller, EJ ;

Schaadt, DM ;

Yu, ET ;

Poblenz, C ;

Elsass, C ;

Speck, JS .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (12) :9821-9826

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