Chloride ion detection by InN gated AlGaN/GaN high electron mobility transistors

被引:12
作者
Chu, Byung-Hwan [1 ]
Lin, Hon-Way [2 ]
Gwo, Shangjr [2 ]
Wang, Yu-Lin [3 ]
Pearton, S. J. [3 ]
Johnson, J. W. [4 ]
Rajagopal, P. [4 ]
Roberts, J. C. [4 ]
Piner, E. L. [4 ]
Linthicuni, K. J. [4 ]
Ren, Fan [1 ]
机构
[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
[2] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan
[3] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[4] Nitronex Corp, Durham, NC 27703 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2010年 / 28卷 / 01期
基金
美国国家科学基金会;
关键词
aluminium compounds; biosensors; chemical sensors; chlorine; gallium compounds; high electron mobility transistors; III-V semiconductors; indium compounds; pH measurement; radiocommunication; semiconductor thin films; wide band gap semiconductors; EXHALED BREATH CONDENSATE; SURFACE; ACCUMULATION; LACTATE; FILMS; GAS; PH;
D O I
10.1116/1.3271253
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Real time chloride ion detection using InN gated AlGaN/GaN high electron mobility transistors (HEMTs) was demonstrated. The InN thin film on the gate area of the HEMT provided fixed surface sites for reversible anion coordination. The drain current of the HEMT sensor exhibited increased a function of chloride ion concentration. The positive ions (Na+, Mg+2, and H+) in the chloride ion solutions showed no effect on the chloride ion concentration detection. The sensor was tested over a range of chloride ion concentrations from 100 nM to 100 mu M. The chloride ion HEMT sensors can be integrated with AlGaN/GaN HEMT based pH and glucose sensors for exhaled breath condensate glucose monitoring technology. The HEMT based sensor can also be integrated into a wireless data transmission system for remote sensing applications.
引用
收藏
页码:L5 / L8
页数:4
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