Graphene oxide as a p-dopant and an anti-reflection coating layer, in graphene/silicon solar cells

被引：54
|
作者：
Yavuz, S. [1 ]
Kuru, C. [1 ]
Choi, D. [1 ]
Kargar, A. [2 ]
Jin, S. [1 ]
Bandaru, P. R. [1 ,2 ]
机构：
[1] Univ Calif San Diego, Dept Mech Engn, Program Mat Sci, La Jolla, CA 92093 USA
[2] Univ Calif San Diego, Dept Elect Engn, La Jolla, CA 92093 USA
来源：
NANOSCALE | 2016年 / 8卷 / 12期
基金：
美国国家科学基金会;
关键词：
HIGH-EFFICIENCY; TRANSPARENT CONDUCTORS; SILICON; FILMS; PARAMETERS;
D O I：
10.1039/c5nr09143h
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
It is shown that coating graphene-silicon (Gr/Si) Schottky junction based solar cells with graphene oxide (GO) improves the power conversion efficiency (PCE) of the cells, while demonstrating unprecedented device stability. The PCE has been shown to be increased to 10.6% (at incident radiation of 100 mW cm(-2)) for the Gr/Si solar cell with an optimal GO coating thickness compared to 3.6% for a bare/uncoated Gr/Si solar cell. The p-doping of graphene by the GO, which also serves as an antireflection coating (ARC) has been shown to be a main contributing factor to the enhanced PCE. A simple spin coating process has been used to apply GO with thickness commensurate with an anti-refection coating (ARC) and indicates the suitability of the developed methodology for large-scale solar cell assembly.
引用
收藏
页码：6473 / 6478
页数：6
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