Investigation of point defect generation in dry etched InP ridge waveguide structures

被引：8

作者：

Avella, M. ^{[1
]}

Jimenez, J.

Pommereau, F.

Landesman, J. P.

Rhallabi, A.

机构：

[1] ETSII, Fis Mat Condensada, Valladolid 47011, Spain

[2] Alcatel Thales III V Lab, F-91128 Palaiseau, France

[3] Inst Mat, CNRS, UMR 6502, Lab Plasmas & Couches Minces, F-44322 Nantes, France

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 22期

关键词：

D O I：

10.1063/1.2743384

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Waveguides engraved in InP by dry etching, reactive ion etching and inductively coupled plasma (ICP), were studied by cathodoluminescence. The dry etching processes were found to induce nonradiative recombination centers, which reduce the luminescence emission from the ridge structures. In addition, the ICP process introduced intrinsic defects, probably In vacancy related defects, which were generated at the dielectric cap/InP interface at the ridge top. (C) 2007 American Institute of Physics.

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页数：3

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