Application of Single-Pulse Charge Pumping Method on Evaluation of Indium Gallium Zinc Oxide Thin-Film Transistors

被引：17

作者：

Nguyen, Manh-Cuong ^{[1
]}

Nguyen, An Hoang-Thuy ^{[1
]}

Ji, Hyungmin ^{[1
]}

Cheon, Jonggyu ^{[1
]}

Kim, Jin-Hyun ^{[1
]}

Yu, Kyoung-Moon ^{[1
]}

Cho, Seong-Yong ^{[1
]}

Kim, Sang-Woo ^{[1
]}

Choi, Rino ^{[1
]}

机构：

[1] Inha Univ, Dept Mat Sci & Engn, Incheon 22212, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2018年 / 65卷 / 09期

基金：

新加坡国家研究基金会;

关键词：

Band tail; charge pumping (CP); conduction band edge; density of states (DOSs); indium gallium zinc oxide (IGZO); metal-oxide (MO)-semiconductor; oxygen vacancy; single pulse; thin-film transistor (TFT); trap density; trap profiling; DENSITY-OF-STATES; SUBGAP DENSITY; EXTRACTION; NMOSFETS; TIME; DOS;

D O I：

10.1109/TED.2018.2859224

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel single-pulse charge pumping (SPCP) method was proposed and implemented to profile the density of states (DOSs) in metal-oxide-semiconductor thin-film transistors (TFTs). The proposed SPCP method was demonstrated in characterizing the DOS below the conduction band of indium gallium zinc oxide TFTs. The DOSs, including oxygen vacancy donorlike states and band tail states, were characterized successfully with high resolution. This method has all the advantages of the conventional CP method and single-pulse characterization.

引用

页码：3786 / 3790

页数：5

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