ANALYSIS OF INTERFACE TRAPS OF Au/C25H25BF2N2O/n-Si SCHOTTKY DIODES BY HILL-COLEMAN TECHNIQUE

In this work, the C25H25BF2N2O organic thin film was grown on n-Si wafer by the spin coating method. Au/C25H25BF2N2O/n-Si Schottky diodes were prepared, and their series resistance (R-s) and interface trap (N-it) properties were introduced by capacitance-conductance-voltage (C - G - V) in the frequency range from 30 kHz-1 MHz at room temperature. Voltage dependent profile of R-s was calculated from C and G characteristics according to Nicollian and Goetzberger technique. The series resistance impact was removed from the measured capacitance and conductance values to determine the correct capacitance and conductance values of the diode. The G(c) - V profile has a peak for the measured frequencies between 0 V and 0.2 V due to the interface traps (N-it) at n-Si/C25H25BF2N2O interface. The magnitude of peak increases with increasing frequency and shift towards positive voltage. By using these peak values, the frequency dependent variation of the interface traps was determined with the help of the Hill-Coleman technique. It was observed that the interface traps are decreased with increasing the frequency.