On the effect of a dopant on the formation of disordered regions in GaAs under irradiation with fast neutrons

被引：6

作者：

Klad'ko, VP ^{[1
]}

Plyatsko, SV ^{[1
]}

机构：

[1] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-252028 Kiev, Ukraine

来源：

SEMICONDUCTORS | 1998年 / 32卷 / 03期

关键词：

GaAs; Irradiation Dose; Magnetic Material; Electromagnetism; Fast Neutron;

D O I：

10.1134/1.1187386

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effect of the irradiation dose and the density and type of dopant on the size of disordered regions in GaAs was studied by x-ray methods. The role of the impurity in the formation of disordered regions and their evolution with dose was analyzed. (C) 1998 American Institute of Physics.

引用

页码：235 / 237

页数：3