Nonvolatile resistive switching memory based on amorphous carbon

被引:136
作者
Zhuge, F. [1 ]
Dai, W. [1 ]
He, C. L. [1 ]
Wang, A. Y. [1 ]
Liu, Y. W. [1 ]
Li, M. [1 ]
Wu, Y. H. [2 ]
Cui, P. [1 ]
Li, Run-Wei [1 ]
机构
[1] Chinese Acad Sci, NIMTE, Ningbo 315201, Zhejiang, Peoples R China
[2] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore
基金
中国国家自然科学基金;
关键词
RESISTANCE; DEVICES; FILMS;
D O I
10.1063/1.3406121
中图分类号
O59 [应用物理学];
学科分类号
摘要
Resistive memory effect has been found in carbon nanostructure-based devices by Standley et al. [Nano Lett. 8, 3345 (2008)]. Compared to nanostructures, hydrogenated amorphous carbon (a-C: H) has much more controllable preparation processes. Study on a-C: H-based memory is of great significance to applications of carbon-based electronic devices. We observed nonvolatile resistance memory behaviors in metal/a-C: H/Pt structures with device yield 90%, ON/OFF ratio > 100, and retention time > 10(5) s. Detailed analysis indicates that the resistive switching originates from the formation/rupture of metal filaments due to the diffusion of the top electrodes under a bias voltage. (C) 2010 American Institute of Physics. [doi:10.1063/1.3406121]
引用
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页数:3
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