The electrical properties and phase transformation of PLZST 2/85/13/2 antiferroelectric thin films on different bottom electrode

被引：33
作者：
Hao, Xihong [1 ]
Zhai, Jiwei [1 ]
Chou, Xiujian [1 ]
Yao, Xi [1 ]
机构：
[1] Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China
来源：
SOLID STATE COMMUNICATIONS | 2007年 / 142卷 / 09期
基金：
中国国家自然科学基金;
关键词：
PLZST antiferroelectric thin films; electric property; phase transformation;
D O I：
10.1016/j.ssc.2007.03.048
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Pb0.97La0.02(Zr0.85Sn0.13Ti0.02)O-3 (PLZST 2/85/13/2) antiferroelectric thin films were deposited on Pt(111)/Ti/SiO2/Si and LaNiO3 (LNO)/SiO2/Si substrates through a modified sol-gel process. The phase structure and microstructure of PLZST 2/85/13/2 antiferroelectric thin films were analysed by x-ray diffraction (XRD), scanning electron microcopy (SEM) and field-emission SEM (FE-SEM). The antiferroelectric nature of the PLZST 2/85/13/2 thin films on two electrodes was demonstrated by the C-V (capacitance-voltage) and P-E (polarization-electric field) measurement. The maximum polarizations for PLZST 2/85/13/2 films on Pt and LNO electrodes were 42 and 18 mu C/cm(2), respectively. The temperature dependence of the dielectric property of the PLZST 2/85/13/2 films was measured under different dc electric fields. Also, the phase transformation of the PLZST 2/85/13/2 films was studied in detail as a function of temperature and dc electric field. (c) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码：498 / 503
页数：6
相关论文
共 16 条
  • [1] Effects of Ce, Cr and Er doping and annealing conditions on the microstructural features and electrical properties of PbZrO3 thin films prepared by sol-gel process
    Mensur Alkoy, Ebru
    Alkoy, Sedat
    Shiosaki, Tadashi
    [J]. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2005, 44 (9 A): : 6654 - 6660
  • [2] Improved electrical properties of (Pb, La)TiO3 thin films using compositionally and structurally compatible LaNiO3 thin films as bottom electrodes
    Bao, DH
    Wakiya, N
    Shinozaki, K
    Mizutani, N
    Yao, X
    [J]. APPLIED PHYSICS LETTERS, 2001, 78 (21) : 3286 - 3288
  • [3] ELECTRIC-FIELD FORCED PHASE SWITCHING IN LA-MODIFIED LEAD-ZIRCONATE-TITANATE STANNATE THIN-FILMS
    BROOKS, KG
    CHEN, J
    UDAYAKUMAR, KR
    CROSS, LE
    [J]. JOURNAL OF APPLIED PHYSICS, 1994, 75 (03) : 1699 - 1704
  • [4] Effect of La substitution on phase transitions in lead zirconate stannate titanate (55/35/10) ceramics
    Chan, WH
    Xu, Z
    Hung, TF
    Chen, H
    [J]. JOURNAL OF APPLIED PHYSICS, 2004, 96 (11) : 6606 - 6610
  • [5] (Pb,La)(Zr,Sn,Ti)O3 antiferroelectric thin films grown on LaNiO3-buffered and Pt-buffered silicon substrates by sol-gel processing -: art. no. 024102
    Li, X
    Zhai, JW
    Chen, HD
    [J]. JOURNAL OF APPLIED PHYSICS, 2005, 97 (02)
  • [6] Properties of Pb(Zr0.92Ti0.08)O3 thin films deposited by sol-gel
    Pintilie, L
    Boerasu, I
    Gomes, M
    Pereira, M
    [J]. THIN SOLID FILMS, 2004, 458 (1-2) : 114 - 120
  • [7] Size-related ferroelectric-domain-structure transition in a polycrystalline PbTiO3 thin film
    Ren, SB
    Lu, CJ
    Liu, JS
    Shen, HM
    Wang, YN
    [J]. PHYSICAL REVIEW B, 1996, 54 (20): : 14337 - 14340
  • [8] Electrical properties of highly (111)-oriented lead zirconate thin films
    Tang, XG
    Wang, J
    Wang, XX
    Chan, HLW
    [J]. SOLID STATE COMMUNICATIONS, 2004, 130 (06) : 373 - 377
  • [9] Preparation of highly (100)-oriented LaNiO3 nanocrystalline films by metalorganic chemical liquid deposition
    Wang, GS
    Zhao, Q
    Meng, XJ
    Chu, JH
    Rémiens, D
    [J]. JOURNAL OF CRYSTAL GROWTH, 2005, 277 (1-4) : 450 - 456
  • [10] Dependence of electrical properties on film thickness in lanthanum-doped lead zirconate titanate stannate antiferroelectric thin films
    Xu, BM
    Ye, YH
    Wang, QM
    Cross, LE
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 85 (07) : 3753 - 3758
12