Sulfur passivation for photosensitivity control of detectors with corrugated metal III-V semiconductors interface

被引：0

作者：

Dmitruk, NL ^{[1
]}

Mayeva, OI ^{[1
]}

Mamikin, SV ^{[1
]}

Yastrubchak, OB ^{[1
]}

机构：

[1] Natl Acad Sci Ukraine, Inst Phys Semicond, UA-252650 Kyiv, Ukraine

来源：

CAS '97 PROCEEDINGS - 1997 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 20TH EDITION, VOLS 1 AND 2 | 1997年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on sulfur bared surface passivation method for photosensitivity control of MSM detectors with corrugated interface. Spectral and polarization characteristics of photosensitivity me used to study this treatment effectiveness. The investigation results reveal that the photosensitivity of diodes increases up to a one order of magnitude. Such characteristics were monitored over a period of 3 years and were found to be stable. The spectral sensitivity of prepared photodetectors in surface plasmon polaritons excitation regime after S-treatment is tunable over the visible spectrum by a dielectric coating.

引用

页码：263 / 266

页数：4

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