Sulfur passivation for photosensitivity control of detectors with corrugated metal III-V semiconductors interface

被引：0
|
作者：
Dmitruk, NL [1 ]
Mayeva, OI [1 ]
Mamikin, SV [1 ]
Yastrubchak, OB [1 ]
机构：
[1] Natl Acad Sci Ukraine, Inst Phys Semicond, UA-252650 Kyiv, Ukraine
来源：
CAS '97 PROCEEDINGS - 1997 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 20TH EDITION, VOLS 1 AND 2 | 1997年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on sulfur bared surface passivation method for photosensitivity control of MSM detectors with corrugated interface. Spectral and polarization characteristics of photosensitivity me used to study this treatment effectiveness. The investigation results reveal that the photosensitivity of diodes increases up to a one order of magnitude. Such characteristics were monitored over a period of 3 years and were found to be stable. The spectral sensitivity of prepared photodetectors in surface plasmon polaritons excitation regime after S-treatment is tunable over the visible spectrum by a dielectric coating.
引用
收藏
页码：263 / 266
页数：4
相关论文
共 50 条
  • [1] PASSIVATION OF III-V COMPOUND SEMICONDUCTORS
    VIKTOROVITCH, P
    REVUE DE PHYSIQUE APPLIQUEE, 1990, 25 (09): : 895 - 914
  • [2] Chemical Passivation of III-V Semiconductors
    Kunitsyna, Ekaterina
    L'vova, Tatiana
    WOMEN IN PHYSICS, 2013, 1517 : 219 - 219
  • [3] MSM-photodetectors with corrugated metal-semiconductor interface based on III-V semiconductors
    Dmitruk, NL
    Borkovskaya, OY
    Mayeva, OI
    Mamikin, SV
    Yastrubchak, OB
    PHOTODETECTORS: MATERIALS AND DEVICES II, 1997, 2999 : 384 - 390
  • [4] Hydrogen passivation of defects in III-V semiconductors
    Dubey, GC
    Kumar, V
    SEMICONDUCTOR DEVICES, 1996, 2733 : 460 - 466
  • [5] Surface passivation of III-V compound semiconductors
    Kapila, A
    Malhotra, V
    1996 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES, PROCEEDINGS, 1996, : 275 - 282
  • [6] Material properties of III-V semiconductors for lasers and detectors
    Charles W. Tu
    Paul K. L. Yu
    MRS Bulletin, 2003, 28 (5) : 345 - 349+344
  • [7] Novel surface passivation structure for III-V compound semiconductors utilizing a silicon interface control layer and its application
    Hokkaido Univ, Sapporo, Japan
    Mater Res Soc Symp Proc, (45-56):
  • [8] A novel surface passivation structure for III-V compound semiconductors utilizing a silicon interface control layer and its application
    Hashizume, T
    Hasegawa, H
    COMPOUND SEMICONDUCTOR SURFACE PASSIVATION AND NOVEL DEVICE PROCESSING, 1999, 573 : 45 - 56
  • [9] Kinetics of the initial stage in chalcogenide passivation of III-V semiconductors
    Antyushin, VF
    Budanov, AV
    Kukharenko, DS
    Palishkin, DA
    SEMICONDUCTORS, 2003, 37 (11) : 1311 - 1314
  • [10] Surface passivation approaches for silicon, germanium, and III-V semiconductors
    Theeuwes, Roel J.
    Kessels, Wilhelmus M. M.
    Macco, Bart
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2024, 42 (06):
12345