GALLIUM OXIDE: PROPERTIES AND APPLICATIONS - A REVIEW

被引：0

作者：

Stepanov, S. I. ^{[1
,2
]}

Nikolaev, V. I. ^{[1
,3
]}

Bougrov, V. E. ^{[1
]}

Romanov, A. E. ^{[1
,3
]}

机构：

[1] ITMO Univ, Kronverkskiy Prospekt 49-A, St Petersburg 197101, Russia

[2] Peter Great St Petersburg Polytech Univ, Politekhnicheskaya Str 29, St Petersburg 195251, Russia

[3] RAS, AF Ioffe Phys Tech Inst, Politekhnicheskaya Str 26, St Petersburg 194021, Russia

来源：

REVIEWS ON ADVANCED MATERIALS SCIENCE | 2016年 / 44卷 / 01期

关键词：

CHEMICAL-VAPOR-DEPOSITION; BETA-GA2O3; SINGLE-CRYSTALS; MOLECULAR-BEAM EPITAXY; THIN-FILMS; OPTICAL-PROPERTIES; ELECTRONIC-STRUCTURE; GA2O3; FILMS; PHOTOCATALYTIC PERFORMANCE; ELECTROLUMINESCENT DEVICES; STRUCTURAL-PROPERTIES;

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Gallium oxide has attracted a considerable interest as a functional material for various applications. This review summarizes the research work carried out in the field of gallium oxide. Polymorphism, crystal structure, band-structure, optical and electrical properties are discussed. Various methods to produce Ga2O3 thin films, nanostructures and bulk crystals are covered. A special focus is given on potential applications of monoclinic polymorph beta-Ga2O3. Finally, future perspectives of the research in the area of this material are discussed.

引用

页码：63 / 86

页数：24

共 138 条

[71] Electroluminescent devices with Ga2O3:Mn thin-film emitting layer prepared by sol-gel process [J].

Minami, T ;

Shirai, T ;

Nakatani, T ;

Miyata, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (6A) :L524-L526

[72] Oxide thin-film electroluminescent devices and materials [J].

Minami, T .

SOLID-STATE ELECTRONICS, 2003, 47 (12) :2237-2243

[73] Manganese-activated gallium oxide electroluminescent phosphor thin films prepared using various deposition methods [J].

Miyata, T ;

Nakatani, T ;

Minami, T .

THIN SOLID FILMS, 2000, 373 (1-2) :145-149

[74] Gallium oxide as host material for multicolor emitting phosphors [J].

Miyata, T ;

Nakatani, T ;

Minami, T .

JOURNAL OF LUMINESCENCE, 2000, 87-9 (87) :1183-1185

[75] Growth of β-Ga2O3 nanowires and their photocatalytic and optical properties using Pt as a catalyst [J].

Mohamed, S. H. ;

El-Hagary, M. ;

Althoyaib, S. .

JOURNAL OF ALLOYS AND COMPOUNDS, 2012, 537 :291-296

[76] Resistive Oxygen Gas Sensors for Harsh Environments [J].

Moos, Ralf ;

Izu, Noriya ;

Rettig, Frank ;

Reiss, Sebastian ;

Shin, Woosuck ;

Matsubara, Ichiro .

SENSORS, 2011, 11 (04) :3439-3465

[77] High optical and structural quality of GaN epilayers grown on ((2)over-bar01) β-Ga2O3 [J].

Muhammed, M. M. ;

Peres, M. ;

Yamashita, Y. ;

Morishima, Y. ;

Sato, S. ;

Franco, N. ;

Lorenz, K. ;

Kuramata, A. ;

Roqan, I. S. .

APPLIED PHYSICS LETTERS, 2014, 105 (04)

[78] Search for new transparent conductors: Effect of Ge doping on the conductivity of Ga2O3, In2O3 and Ga1.4In0.6O3 [J].

Nag, Angshuman ;

Shireen, Ajmala .

SOLID STATE COMMUNICATIONS, 2010, 150 (35-36) :1679-1682

[79] Devices based on series-connected Schottky junctions and beta-Ga2O3/SiC heterojunctions characterized as hydrogen sensors [J].

Nakagomi, S. ;

Yokoyama, K. ;

Kokubun, Y. .

JOURNAL OF SENSORS AND SENSOR SYSTEMS, 2014, 3 (02) :231-239

[80] Growth of gallium oxide thin films from gallium acetylacetonate by atomic layer epitaxy [J].

Nieminen, M ;

Niinisto, L ;

Rauhala, E .

JOURNAL OF MATERIALS CHEMISTRY, 1996, 6 (01) :27-31

← 3 4 5 6 7 8 9 10 11 12 →