GALLIUM OXIDE: PROPERTIES AND APPLICATIONS - A REVIEW

被引：0
作者：
Stepanov, S. I. [1 ,2 ]
Nikolaev, V. I. [1 ,3 ]
Bougrov, V. E. [1 ]
Romanov, A. E. [1 ,3 ]
机构：
[1] ITMO Univ, Kronverkskiy Prospekt 49-A, St Petersburg 197101, Russia
[2] Peter Great St Petersburg Polytech Univ, Politekhnicheskaya Str 29, St Petersburg 195251, Russia
[3] RAS, AF Ioffe Phys Tech Inst, Politekhnicheskaya Str 26, St Petersburg 194021, Russia
来源：
REVIEWS ON ADVANCED MATERIALS SCIENCE | 2016年 / 44卷 / 01期
关键词：
CHEMICAL-VAPOR-DEPOSITION; BETA-GA2O3; SINGLE-CRYSTALS; MOLECULAR-BEAM EPITAXY; THIN-FILMS; OPTICAL-PROPERTIES; ELECTRONIC-STRUCTURE; GA2O3; FILMS; PHOTOCATALYTIC PERFORMANCE; ELECTROLUMINESCENT DEVICES; STRUCTURAL-PROPERTIES;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Gallium oxide has attracted a considerable interest as a functional material for various applications. This review summarizes the research work carried out in the field of gallium oxide. Polymorphism, crystal structure, band-structure, optical and electrical properties are discussed. Various methods to produce Ga2O3 thin films, nanostructures and bulk crystals are covered. A special focus is given on potential applications of monoclinic polymorph beta-Ga2O3. Finally, future perspectives of the research in the area of this material are discussed.
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页码：63 / 86
页数：24
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