Low-k dielectrics on base of silicon carbon nitride films

被引：39
作者：
Fainer, Nadezhda
Rumyantsev, Yuri
Kosinova, Marina
Maximovski, Eugeni
Kesler, Valeri
Kirienko, Victor
Kuznetsov, Fedor
机构：
[1] Russian Acad Sci, Nikolaev Inst Inorgan Chem SB, Novosibirsk 630090, Russia
[2] Russian Acad Sci, Inst Semicond Phys SB, Novosibirsk 630090, Russia
来源：
SURFACE & COATINGS TECHNOLOGY | 2007年 / 201卷 / 22-23期
基金：
俄罗斯基础研究基金会;
关键词：
silicon carbonitride films; low-k dielectrics; PECVD; electrophysical characteristics; optical properties;
D O I：
10.1016/j.surfcoat.2007.04.046
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Thin silicon carbonitride films were synthesized by PECVD using siliconorganic compound as single-source precursor within a temperature range of 373-623 K. IR and Raman spectroscopy, AES, XPS, ellipsometry, XRD using the synchrotron radiation, EDS, SEM, AFM, measurements of electrophysical, mechanical characteristics and optical properties were applied to study their physicochemical and functional properties. It was shown that low temperature films are low-k dielectrics with the following characteristics: a dielectric constant of 3.0-7.0, specific resistance, rho=10(13)-10(16) Om x cm, E-dielectric (breakdown) similar to 1 MV/cm, surface state density N-ss similar to 2.4-10(11) cm(-2)center dot eV(-1) and fixed charge density of about 1.6 x 10(11) cm(-2). The bandgap of the films changes from 5.35 up to similar to 3.30 eV. Obtained films are very flat and smooth, root mean square roughness R-ms equals to similar to 0.5-1.0 nm. Microhardness of these films changes from 1.9 up to 2.4 GPa, and Young's modulus changes from 12.2 up to 15.9 GPa. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：9269 / 9274
页数：6
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