Effect of substrate temperature on structural and optical properties of the new high absorbent Sn3Sb2S6 thin films

被引:19
作者
Larbi, A. [1 ]
Dahman, H. [2 ]
Kanzari, M. [1 ,3 ]
机构
[1] Lab Photovoltaique & Mat Semiconduct, Tunis, Tunisia
[2] Gabes Univ, Fac Sci, Lab Phys Mat & Nanomat Appl Environm LaPhyMNE, Gabes 6072, Tunisia
[3] Univ Tunis, IPEI Tunis Montfleury, Tunis, Tunisia
关键词
Sn3Sb2S6; Thin films; Thermal evaporation; Substrate temperature; Structural properties; High absorption coefficient; AMORPHOUS SEMICONDUCTORS; CONSTANTS; BEHAVIOR;
D O I
10.1016/j.vacuum.2014.08.009
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper we present the influence of substrate temperature on structural and optical characteristics of the ternary Sn3Sb2S6. The samples were deposited by vacuum thermal evaporation onto glass substrates at various substrate temperatures (30-60-100-140-160) degrees C The films were analyzed by X-ray diffraction, atomic force microscopy (AFM) and spectrophotometric measurements. The XRD analysis showed the presence of only homogenous Sn3Sb2S6 phase. The surface roughness of the deposited films varied between 3.6 and 16 nm with decreasing the substrate temperature from 160 to 30 degrees C We found that by increasing the substrate temperature from 30 to 160 degrees C, the optical band gap decreased from 1.47 to 1.18 eV. The absorption coefficients of the films are in the range of 105-106 cm(-1). The refractive index n has been analyzed according to the Wemple-Di Domenico single oscillator model and the values of E-0 and E-d were determined. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码:34 / 39
页数:6
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