Photoionization study of deep centers in GaN/AlGaN multiple quantum wells

被引：0
作者：
Zhang, S. K. [1 ]
Wang, W. B. [2 ]
Alfano, R. R. [2 ]
Teke, A. [3 ,4 ]
He, L. [3 ]
Dogan, S. [3 ,5 ]
Johnstone, D. J. [3 ]
Morkoc, H. [3 ]
机构：
[1] CUNY, New York City Coll Technol, Dept Phys, Brooklyn, NY 11201 USA
[2] CUNY City Coll, Inst Ultrafast Spect & Lasers, New York, NY 10031 USA
[3] Virginia Commonwealth Univ, Dept Elect Engn, Richmond, VA 23284 USA
[4] Balikesir Univ, Fac Art & Sci, Dept Phys, TR-10100 Balikesir, Turkey
[5] Ataturk Univ, Fac Art & Sci, Dept Phys, TR-25240 Erzurum, Turkey
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2010年 / 28卷 / 03期
关键词：
aluminium compounds; gallium compounds; III-V semiconductors; photocapacitance; photoionisation; photovoltaic effects; semiconductor quantum wells; wide band gap semiconductors; OPTICAL ADMITTANCE SPECTROSCOPY; SI-DOPED GAN; N-TYPE GAN; YELLOW LUMINESCENCE; UNDOPED GAN; PHOTOLUMINESCENCE; PHOTOCONDUCTIVITY; DEFECTS; EPITAXY; STATES;
D O I：
10.1116/1.3268613
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Transient photocapacitance (TPC) measurements were performed to investigate deep centers in GaN/AlGaN multiple quantum wells. The influence of the persistent photovoltaic effect was successfully separated during the TPC experiments. The resolution obtained by the TPC measurements is much better than that of steady-state photocapacitance. The spectral dependence of photoionization cross section of deep centers in GaN is quantitatively determined in the energy range from 1.68 to 3.30 eV. The absolute values of photoionization cross sections of these centers are found to be of the order of 10(-15)-10(-14) cm(2). (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3268613]
引用
收藏
页数：3
相关论文
共 15 条
[1]  
BLOOD P., 1992, CHARACTERIZATION SEM
[2]   Yellow luminescence and related deep states in undoped GaN [J].
Calleja, E ;
Sanchez, FJ ;
Basak, D ;
SanchezGarcia, MA ;
Munoz, E ;
Izpura, I ;
Calle, F ;
Tijero, JMG ;
SanchezRojas, JL ;
Beaumont, B ;
Lorenzini, P ;
Gibart, P .
PHYSICAL REVIEW B, 1997, 55 (07) :4689-4694
[3]   Optical absorption and anomalous photoconductivity in undoped n-type GaN [J].
Chung, SJ ;
Jeong, MS ;
Cha, OH ;
Hong, CH ;
Suh, EK ;
Lee, HJ ;
Kim, YS ;
Kim, BH .
APPLIED PHYSICS LETTERS, 2000, 76 (08) :1021-1023
[4]   DEEP LEVELS AS LOCAL PROBES FOR THE STUDY OF SUPERLATTICES [J].
DEVEAUD, B ;
LAMBERT, B ;
PLOT, B ;
CHOMETTE, A ;
REGRENY, A ;
BOURGOIN, JC ;
STIEVENARD, D .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (09) :3772-3777
[5]   Characterization of the dominant midgap levels in Si-doped GaN by optical-isothermal capacitance transient spectroscopy [J].
Hacke, P ;
Okushi, H .
APPLIED PHYSICS LETTERS, 1997, 71 (04) :524-526
[6]   Dynamical study of the yellow luminescence band in GaN [J].
Hoffmann, A ;
Eckey, L ;
Maxim, P ;
Holst, JC ;
Heitz, R ;
Hofmann, DM ;
Kovalev, D ;
Stevde, G ;
Volm, D ;
Meyer, BK ;
Detchprohm, T ;
Hiramatsu, K ;
Amano, H ;
Akasaki, I .
SOLID-STATE ELECTRONICS, 1997, 41 (02) :275-278
[7]   Photoionization spectroscopy of traps in GaN metal-semiconductor field-effect transistors [J].
Klein, PB ;
Binari, SC ;
Freitas, JA ;
Wickenden, AE .
JOURNAL OF APPLIED PHYSICS, 2000, 88 (05) :2843-2852
[8]   Optical admittance spectroscopy of deep centers in galliumnitride - Correlation with photoluminescence [J].
Krtschil, A ;
Fischer, P ;
Witte, H ;
Lisker, M ;
Christen, J ;
Birkle, U ;
Einfeldt, S ;
Hommel, D .
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 :1381-1384
[9]   Characterization of electronic states in molecular beam epitaxy grown GaN by optical admittance spectroscopy: Comparison of different nitrogen plasma sources [J].
Krtschil, A ;
Witte, H ;
Lisker, M ;
Christen, J ;
Birkle, U ;
Einfeldt, S ;
Hommel, D .
APPLIED PHYSICS LETTERS, 1999, 74 (14) :2032-2034
[10]   Microscopic nature and optical properties of metastable defects in electron-irradiated GaAs [J].
Kuisma, S ;
Saarinen, K ;
Hautojarvi, P ;
Corbel, C .
PHYSICAL REVIEW B, 1997, 55 (15) :9609-9620
12