Nanocrystalline silicon for optoelectronic applications

被引:48
作者
Tsybeskov, L [1 ]
机构
[1] Univ Rochester, Dept Elect Engn, Rochester, NY 14627 USA
关键词
D O I
10.1557/S0883769400030244
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
[No abstract available]
引用
收藏
页码:33 / 38
页数:6
相关论文
共 50 条
[1]  
BERGH AA, 1976, LIGHT EMITTING DIODE, P591
[2]  
Brown TG, 1998, SEMICONDUCT SEMIMET, V49, P77
[3]   ELECTRONIC SPECTROSCOPY AND PHOTOPHYSICS OF SI NANOCRYSTALS - RELATIONSHIP TO BULK C-SI AND POROUS SI [J].
BRUS, LE ;
SZAJOWSKI, PF ;
WILSON, WL ;
HARRIS, TD ;
SCHUPPLER, S ;
CITRIN, PH .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1995, 117 (10) :2915-2922
[4]   VOLTAGE-CONTROLLED SPECTRAL SHIFT OF POROUS SILICON ELECTROLUMINESCENCE [J].
BSIESY, A ;
MULLER, F ;
LIGEON, M ;
GASPARD, F ;
HERINO, R ;
ROMESTAIN, R ;
VIAL, JC .
PHYSICAL REVIEW LETTERS, 1993, 71 (04) :637-640
[5]   IDENTIFICATION OF RADIATIVE TRANSITIONS IN HIGHLY POROUS SILICON [J].
CALCOTT, PDJ ;
NASH, KJ ;
CANHAM, LT ;
KANE, MJ ;
BRUMHEAD, D .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 (07) :L91-L98
[6]   SPECTROSCOPIC IDENTIFICATION OF THE LUMINESCENCE MECHANISM OF HIGHLY POROUS SILICON [J].
CALCOTT, PDJ ;
NASH, KJ ;
CANHAM, LT ;
KANE, MJ ;
BRUMHEAD, D .
JOURNAL OF LUMINESCENCE, 1993, 57 (1-6) :257-269
[7]   PROGRESS TOWARD CRYSTALLINE-SILICON-BASED LIGHT-EMITTING-DIODES [J].
CANHAM, L .
MRS BULLETIN, 1993, 18 (07) :22-28
[8]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[9]   LIGHT-INDUCED ELECTRON-SPIN-RESONANCE IN POROUS SILICON [J].
CARLOS, WE ;
PROKES, SM .
APPLIED PHYSICS LETTERS, 1994, 65 (10) :1245-1247
[10]   Porous silicon: From luminescence to LEDs [J].
Collins, RT ;
Fauchet, PM ;
Tischler, MA .
PHYSICS TODAY, 1997, 50 (01) :24-31