Ultrafast and Gigantic Spin Injection in Semiconductors

被引:46
作者
Battiato, M. [1 ]
Held, K. [1 ]
机构
[1] Vienna Univ Technol, Inst Solid State Phys, A-1040 Vienna, Austria
基金
奥地利科学基金会; 欧洲研究理事会;
关键词
SILICON; DEMAGNETIZATION; DRIVEN; MAGNETORESISTANCE; TRANSPORT;
D O I
10.1103/PhysRevLett.116.196601
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The injection of spin currents in semiconductors is one of the big challenges of spintronics. Motivated by the ultrafast demagnetization and spin injection into metals, we propose an alternative femtosecond route based on the laser excitation of superdiffusive spin currents in a ferromagnet such as Ni. Our calculations show that even though only a fraction of the current crosses the Ni-Si interface, the laser-induced creation of strong transient electrical fields at a ferromagnet-semiconductor interface allows for the injection of chargeless spin currents with record spin polarizations of 80%. Beyond that they are pulsed on the time scale of 100 fs which opens the door for new experiments and ultrafast spintronics.
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页数:5
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